Efficient power extraction at TRAPATT harmonics

Slaymaker, N.A.; Carroll, J.E.; DeBoise, R.H.

doi:10.1049/el:19700515

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Circuits Coaxial Circuit1

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1971

1976

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Cited by 11 publications

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“…The points on figures 1 and 2 depicting high frequency operation (J-band) were obtained by harmonic extraction (6). To obtain harmonic operation the tuning slugs were re-adjusted in order to load the required harmonic resistively, and the fundamental and other harmonics reactively.…”

Section: Circuits Coaxial Circuitmentioning

confidence: 99%

High Efficiency X-Band Trapatt Amplifiers and Oscillators

Oxley¹,

Howard²,

Gordon³

et al. 1976

6th European Microwave Conference, 1976

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Silicon p+nx+ TRAPATT diodes have given X-band amplification with added power efficiencies of up to 25% and fundamental X-band oscillation with efficiencies as high as 35%. The diodes are fabricated by an Integral Heat Sink (IHS) technology and the p+n junction is formed by a combination of ion implantation and a drive-in period. Double-sided heat sinking has enabled oscillator performance to be extended to pulse-widths of greater than 5 microseconds, and mean output powers of 1 Watt have been recorded. Coaxial amplifier circuits produced small signal gains of 9dB, and large signal gains of 4dB with 1dB bandwidths of 500 MHz at 9.25 GHz with RF peak powers of over 12 watts. The design and performance of both coaxial and microstrip circuits is discussed.

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Section: Circuits Coaxial Circuitmentioning

confidence: 99%