A highly efficient and colour-stable three-wavelength white organic light-emitting diode with the structure of indium tin oxide (ITO)/MoO3/N,N′-diphenyl-N,N′-bis (1-naphthylphenyl)-1,1′-biphenyl-4,4′-diamine (NPB)/4,4′-N,N′-dicarbazole-biphenyl (CBP): bis(2,4-diphenylquinolyl-N,C2′)iridium(acetylacetonate) (PPQ)2Ir(acac)/NPB/ p-bis(p-N,N-diphenyl-aminostyryl)benzene (DSA-Ph):2-methyl-9,10-di(2-naphthyl) anthracene (MADN)/tris (8-hydroxyquinoline) aluminum (AlQ): 10-(2-Benzothiazolyl)-2,3,6,7-tetrahydro-1,1,7,7-tetramethyl-1H,5H,11H-(1)-benzopyropyrano(6,7-8-i,j)quinolizin-11-one (C545T)/AlQ/LiF/Al is fabricated and characterized. A current efficiency of 12.3 cd A−1 at an illumination-relevant brightness of 1000 cd m−2 is obtained, which rolls off slightly to 10.3 cd A−1 at a rather high brightness of 10 000 cd m−2. We attribute this great reduction in the efficiency roll-off to the wise management of singlet and triplet excitons between emissive layers as well as the superior charge injection and diffusion balance in the device.