Efficient photoelectric converters of ultraviolet radiation based on ZnS and CdS with low-resistivity surface layers

Bobrenko, Yu. N.; Pavelets, S. Yu.; Pavelets, A. M.; Kiselyuk, M. P.; Yaroshenko, N. V.

doi:10.1134/s1063782610080221

Cited by 7 publications

(7 citation statements)

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“…One of the most sensitive UV sensors was developed on the basis of the surface-barrier structure -Cu 1.8 S/ -CdS with the photosensitive component on the basis of cadmium sulfide CdS (the band gap width = 2.42 eV) [19][20][21]. Their shortcoming consists in that they are sensitive in the visible spectral interval of solar radiation as well.…”

Section: Introductionmentioning

confidence: 99%

Ultraviolet Sensors Based on ZnxCd1 – xS Solid Solutions

Pavelets¹,

Bobrenko²,

Semikina³

et al. 2019

Ukr. J. Phys.

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Effective semiconductor ultraviolet sensors on the basis of Zn0.6Cd0.4S and Zn0.7Cd0.3 solid solutions (SSs) are fabricated. The sensors include variband layers and a thin (∼10 nm) stable polycrystalline p-Cu1.8S film as a transparent component of the surface-barrier structure. The n-CdS layers are used as substrates for the epitaxial growing of SSs. The problems of obtaining low-resistive ZnxCd1−xS polycrystalline layers, providing an ohmic contact with them, and matching the lattice parameters in the SS and the substrate material are resolved by applying intermediate variband layers. On the basis of a heterostructure with glass filters, a selective sensor in the UV-A spectral interval is developed, as well as sensors sensitive to the pigmentation interval of solar radiation (the violet-blue section). Energy band diagrams of the multilayer structure are plotted. The results of Auger-spectroscopic researches and the researches of the main electrical and photovoltaic properties of sensors are reported.

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Section: Introductionmentioning

confidence: 99%

Ultraviolet Sensors Based on ZnxCd1 – xS Solid Solutions

Pavelets¹,

Bobrenko²,

Semikina³

et al. 2019

Ukr. J. Phys.

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“…Among them are those based on the surface-barrier structures whose transparent component is degenerate copper sulfide pCu 1.8 S, while photosensitive components are n-type semiconductors ZnS [1], ZnSe [2] or CdS [3]. The most efficient are p-Cu 1.8 S/n-CdS UV sensors.…”

Section: Introductionmentioning

confidence: 99%

ZnTe-based UV sensors

Pavelets¹

2016

Semicond. Phys. Quantum Electron. Optoelectron.

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Abstract.A р-ZnTe/n-CdSe heterojunction was used for making polycrystalline ZnTebased UV sensors. The heteropair components have the same crystal structure and close lattice parameters. ZnTe and CdSe were grown using thermal evaporation and quasiclosed space condensation. A transparent current collecting electrode for the surfacebarrier structure of р-ZnTe/n-CdSe heterojunction was made of degenerate p-Cu 1.8 S. Surface relief of ZnTe grown on different substrates was studied with scanning atomic force microscopy. The energy band offset diagrams of heterojunction are built and photosensitivity spectra are presented.

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“…New prospects for the development of barrier structures are related to the existence of an effective match with n-type IIVI semiconductors, namely, digenite p-Cu 1.8 S (stable strongly degenerate modification of copper chalcogenide) [10][11][12][13]. The advantages of using p-Cu In this work, we report on fabrication of Cu 1.8 S/CdTe SC (based on polycrystalline n-CdTe) and studying its main properties.…”

Section: Introductionmentioning

confidence: 99%

“…The effect of intergrowth of donor-type point defects from the CdSe substrate to n-CdТе through a developing graded-gap interlayer (which is characteristic of ZnS and ZnSe [10,12]) was not observed in the multilayer structures under investigation. The electron concentration did not exceed 3 14 cm 10  , which is obviously not enough for efficient operation of SC.…”

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Thin-film solar converters based on the p-Cu1.8S/n-CdTe surface-barrier structure

Bobrenko¹

2015

Semicond. Phys. Quantum Electron. Optoelectron.

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Abstract. A surface-barrier structure with the transparent p-Cu 1.8 S component was used to make thin-film polycrystalline n-CdTe-based solar converters. Cadmium telluride was grown on CdSe substrates using the quasi-closed volume technique through a graded-gap CdSe x Te 1x interlayer. A multilayer p-Cu 1.8 S/n-CdTe/n-CdSe/Мо structure was prepared. It makes it possible to increase the degree of structural perfection of thin photosensitive n-CdTe layers without application of additional high-temperature treatments, as well as to obtain an ohmic back contact without some additional doping of CdTe. The quantum efficiency spectra and critical parameters of solar converters have been presented. The prospects for application of polycrystalline n-CdTe in solar power engineering have been discussed.

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Efficient photoelectric converters of ultraviolet radiation based on ZnS and CdS with low-resistivity surface layers

Cited by 7 publications

References 1 publication

Ultraviolet Sensors Based on ZnxCd1 – xS Solid Solutions

Ultraviolet Sensors Based on ZnxCd1 – xS Solid Solutions

ZnTe-based UV sensors

Thin-film solar converters based on the p-Cu1.8S/n-CdTe surface-barrier structure

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