With increasing O 2 /Ar flow ratio from 2/18 to 20/0, TiO 2 films were deposited by the direct current pulsed magnetron sputtering technique. The influence of O 2 /Ar flow ratio on plasma properties was discussed, which controlled the growth behaviour of TiO 2 film. The growth behaviour influenced the value of roughness exponent α of TiO 2 film, which reflected the dynamic scaling of the morphological evolution of TiO 2 film. Finally, the relation between the dynamic scaling of the morphological evolution of TiO 2 film and O 2 /Ar flow ratio was discussed systematically. The results indicate that with the other parameters constant, the growth behaviour of TiO 2 film is dominated by O 2 /Ar flow ratio. By increasing O 2 /Ar flow ratio from 2/18 up to 6/14, the growth behaviour of TiO 2 film transforms from the shadowing effect controlling to diffuse effect controlling, which results in the density of island structure on TiO 2 film surface decreases, the size of island structure on TiO 2 film surface increases, and the roughness exponent α of film decreases. When O 2 /Ar flow ratio exceeds 6/14, the density of island structure on TiO 2 film surface remains constant. In this situation, the crystallographic orientation effect controls the growth behaviour of TiO 2 film, which increases roughness exponent α.