Efficient NBTI modeling technique considering recovery effects

Abstract

The aging effect "Negative Bias Temperature Instability", which is highly dependent on device history, has a direct impact on the design of integrated circuits. In order to make realistic predictions available in the design process, simulation durations of existing history aware models must be significantly reduced. Therefore, a performance-oriented, yet accurate abstraction of the switching trap NBTI model is presented within this paper. Evaluation results for various stress scenarios demonstrate very precise NBTI simulations and a major improvement to another performance-oriented model abstraction. Simulation durations facilitate realistic aging predictions of larger components in a reasonable period of time.