Efficient n-Type Surface Doping in Diamond

Abstract

Conventional doping in diamond is challenging for its application in electronic devices, which could be overcome by an alternative method of surface-transfer doping. In this study, efficient surface n-type conductivity is obtained on the N-terminated diamond surface doped with decamethylcobaltocene (DMC) and cobaltocene (CoCp 2 ) molecules having low ionization energy values by firstprinciples calculation. By the surface-transfer doping mechanism, electrons are transferred from the dopants to diamond, and then electron accumulation occurs on the diamond surface. For DMC-and CoCp 2 -doped diamond surfaces, the areal electron density values are 4.822 × 10 13 and 4.519 × 10 13 cm −2 , and the carrier mobility values are 357 and 108 cm 2 V −1 s −1 at 298 K, respectively. Moreover, after DMC and CoCp 2 molecular adsorption, the optical absorption coefficient increases in the visible region. This study will promote investigations for two-dimensional electron gas on the diamond surface.

Efficient doping of functionalized graphene and h-BN by molecular adsorption

“…The same phenomenon also occurs in TTF/ fluorographene and DMPD/fluorographene. Compared with carrier concentrations of previous studies (table S3), our results are slightly higher than the 3.0 × 10 12 of V 2 O 5 /H-terminated diamond [46] in the experiment, and the values are lower than other structures [46,47].…”

Hydride Locations and Planar σ‐Aromaticity in Hydrido‐Coinage‐Metal Clusters

“…As we know, aromaticity is traditionally defined as a closed ring of conjugated π‐electrons. In recent years, the concept of σ‐aromaticity has been expanded to include metallic clusters [58–60] . The use of σ‐aromaticity concepts has been shown to be crucial adjective to understand the chemical bonding and delocalized electrons in metal clusters, as demonstrated by Boldyrev et al.…”

Computationally assessing diamond as an ultrafast pulse shaper for high-power ultrawideband radar

“…Diamond homoepitaxy has been continuously improving; however, problems with n-type doping persist with many dopants like nitrogen, phosphorus, and sulfur due to the activation energy of these dopants being much higher than 26 meV (thermal energy at room temperature). Among n-dopants, only phosphorus behaves as a shallow level center, and, therefore, alternative unconventional doping methods like n-type surface doping (Liu et al, 2022) and co-doping (Li et al, 2004) are pursued. Technologically, a canonical vertical p-i-n diamond DAS and DSRD n + layers can be obtained through fabricating a so-called merged diode (Kubovic et al, 2007), depositing bandgapmatched n-type AlGaN alloy or high-conductivity n-type Frontiers in Carbon frontiersin.org nanocrystalline diamond (NCD) (Nikhar et al, 2020).…”