Efficient n-i-p Monolithic Perovskite/Silicon Tandem Solar Cells with Tin Oxide via a Chemical Bath Deposition Method

Abstract

Tandem solar cells, based on perovskite and crystalline silicon absorbers, are promising candidates for commercial applications. Tin oxide (SnO2), applied via the spin-coating method, has been among the most used electron transfer layers in normal (n-i-p) perovskite/silicon tandem cells. SnO2 synthesized by chemical bath deposition (CBD) has not yet been applied in tandem devices. This method shows improved efficiency in perovskite single cells and allows for deposition over a larger area. Our study is the first to apply low-temperature processed SnO2 via CBD to a homojunction silicon solar cell without additional deposition of a recombination layer. By controlling the reaction time, a tandem efficiency of 16.9% was achieved. This study shows that tandem implementation is possible through the CBD method, and demonstrates the potential of this method in commercial application to textured silicon surfaces with large areas.

Perovskite/Silicon Tandem Solar Cells with a Voc of 1784 mV Based on an Industrially Feasible 25 cm2 TOPCon Silicon Cell

“…SiO x acts as an insulator and causes a series resistance increase in tandem device, so it should be avoided. These results show the limitations of the ITO sputtering process on silicon, which also shows the advantage of nonconductive recombination junctions that we propose …”

“…These results show the limitations of the ITO sputtering process on silicon, which also shows the advantage of nonconductive recombination junctions that we propose. 42 In a large-area tandem device, a top-electrode design that is different from that of a small-area device must be considered for application. 43 The use of a metal grid is essential for improving current collection over large areas in tandem cells.…”

Titanium Silicide: A Promising Candidate of Recombination Layer for Perovskite/Tunnel Oxide Passivated Contact Silicon Two-Terminal Tandem Solar Cells

“…Various studies have reported the formation of a thermodynamically stable thin SiO X layer at the interface while depositing oxide-based materials. , Based on the images, the TiSi 2 layer can be clearly distinguished for initial Ti layers thicker than 25 nm. As the initial Ti layer thickness increased, the TiSi 2 thickness also increased, whereas that of SiO X remained nearly constant.…”

Balancing Charge‐Carrier Transport and Recombination for Perovskite/TOPCon Tandem Solar Cells with Double‐Textured Structures

“…The J–V characteristic curves of these related cases are plotted in Figure 5D, and the corresponding electrical parameters are listed in Table 1 , suggesting that: 1) the double‐textured sample demonstrates an outstanding J sc with a value of 19.40 mA cm −2 , which is much higher than that of the double‐polished (17.80 mA cm −2 ) and rear‐textured (18.20 mA cm −2 ) ones; 2) due to the optical gain, the textured samples show a slightly higher V oc and FF; 3) a double‐textured sample achieve a remarkable efficiency of 28.49%. [ 26–30 ] The corresponding EQE spectra demonstrated in Figure 5E reveal that the presence of the rear‐side nano‐structures could effectively promote light‐trapping, especially in the infrared band, and samples with the double‐textured structures could improve the optical absorption of almost the whole wavelength range that involved. Importantly, the iV oc s from bottom cell precursors with the different RF powers and annealing temperatures along with the corresponding device parameters of perovskite/TOPCon TSCs are given in Figures S11 and S12, Supporting Information, suggesting that the efficiencies of these tandems show identical tendency with that of the passivation and contact properties.…”