Efficient methods for Hall factor and transport coefficient evaluation for electrons and holes in Si and SiGe based on a full-band structure

A novel 0.7 V high sensitivity complementary differential MAGFET sensor for contactless mechatronic applications

“…The NMOS MAGFET had a sensing channel area of 2 × 0.13 m × 30 m while the PMOS MAGFET had a sensing channel area of 2 × 0.13 m × 150 m. This choice of channel areas is based on the greater than 3 times variation between the hole and electron mobilities [22] specially in a deep nanometric CMOS process, as well as the significant difference between the threshold voltages (e.g., V THN = 0.07 V and V THP = −0.2 V for the 130 nm IBM CMOS process) unlike the assumption of |V THN | = |V THP | in [11]. In addition, as discussed in the previous section, NMAGFET and PMAGFET sensitivities are dependent on the Hall carrier mobilities ( HN and HP ) and not just the carrier mobilities ( N and P ) with the Hall factor for electron being almost twice that of hole [15]. Comparative performance verification of the CDMAGFET in relation to the NMAGFET and the CCMAGFET, rather than the optimization of the CDMAGFET geometry for simultaneous pull-up and pulldown current match (risetime and falltime match) and maximum magnetic sensitivity [22], is the main objective in these simulations.…”

“…The sensitivities S RN and S RP are in general dependent on the electron and hole Hall carrier mobilities ( HN and HP , respectively) and not just the carrier mobilities ( N and P ). The Hall mobility, H is the product of the carrier mobility and the Hall factor r H [14] with electrons having higher Hall factor than holes by almost two times [15]. An extended expression for modeling Hall mobility can be expressed by [16]:…”

Moments of the Inverse Scattering Operator of the Boltzmann Equation: Theory and Applications

“…Equation (4.21) is more general than the formula given in [7] and reduces to the formula given in [10] in special cases. In the case of unstrained bulk silicon, e.g., because of the symmetries of the crystal, (4.18) takes the form…”