Efficient low-loss InGaAsP/Si hybrid MOS optical modulator

Han, Jae‐Hoon; Bœuf, F.; Fujikata, Junichi; Takahashi, Shigeki; Takagi, Shinichi; Takenaka, Mitsuru

doi:10.1038/nphoton.2017.122

Cited by 179 publications

(85 citation statements)

References 29 publications

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“…Single or double SLG electro-absorption modulators can also be used as electro-refractive modulators, for example, in a MZI modulator with SLG phase shifters on its two arms [70,77]. The FOM PM for SLG-based electrorefractive modulators is about ten times higher than that for Si-based phase modulators when μ of SLG is high (τ > 100 fs), comparable to that of InGaAsP (refs [105,106]). This higher FOM PM is a result of the combination of the large electro-refractive effect, V π L, and low α loss .…”

Section: Graphene-based Modulatorsmentioning

confidence: 99%

“…With this configuration, a 3 dB modulation bandwidth of 2 GHz and a data rate of 32 Gb s −1 with V π L = 0.9 V mm were reported [105]. The InGaAsP-thin-oxide-Si stack exploits the capacitor concept first used in the Si-insulator-Si capacitor (SISCAP) [93], with the advantage of replacing the lossy poly-Si top layer with a highly efficient electro-refractive n-doped InGaAsP membrane [105,106]. The SLG-thinoxide-SLG capacitor exploits the same effect, with good electro-refractive efficiency, but with the advantage that the capacitor is placed on a passive waveguide made of, for example, either Si, SiN or SiO 2 (refs [70,77]).…”

Section: Graphene-based Modulatorsmentioning

confidence: 99%

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Graphene-based integrated photonics for next-generation datacom and telecom

Romagnoli¹,

Sorianello²,

et al. 2018

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Graphene is an ideal material for optoelectronic applications. Its photonic properties give several advantages and complementarities over Si photonics. For example, graphene enables both electro-absorption and electro-refraction modulation with an electro-optical index change exceeding 10 −3 . It can be used for optical add-drop multiplexing with voltage control, eliminating the current dissipation used for the thermal detuning of microresonators, and for thermoelectric-based ultrafast optical detectors that generate a voltage without transimpedance amplifiers. Here, we present our vision for graphene-based integrated photonics. We review graphene-based transceivers and compare them with existing technologies. Strategies for improving power consumption, manufacturability and wafer-scale integration are addressed. We outline a roadmap of the technological requirements to meet the demands of the datacom and telecom markets. We show that graphene based integrated photonics could enable ultrahigh spatial bandwidth density , low power consumption for board connectivity and connectivity between data centres, access networks and metropolitan, core, regional and long-haul optical communications.Photonics is poised to play an increasingly important role in ICT ( Fig. 1a), since the fixed high capacity links are largely based on photonic technologies. Photonic devices need to support ultra-large bandwidth operation, for example, 200 Tb s−1 in a single fibre[9] and >10 Tb s −1 cm −2 in integrated Si photonics chips [10]. To achieve this, the key components of Si photonics, photodetectors and modulators, need very high performances in terms of speed (≥25 Gb s −1 ), footprint (<1 mm 2 ), insertion loss (<4 dB), manufacturability (>10 6 pieces per year) and power consumption (<1 pJ bit −1 ). To date, these requirements have not been fulfilled in one system [11]. Furthermore, in terms of production volumes, photonics is not yet comparable to microelectronics [12], even if the increase in demand for optical networks would, by 2021, lead to an average global Internet Protocol (IP) traffic of 3.3 ZB (zettabytes), corresponding to an average usage data rate of ~800 Tb s −1 (refs[13,14]). In the context of the IoT[7], other applications, including infrared (IR) sensors, biosensors, environmental sensors, metrology, quantum communications and machine vision, will require even larger production volumes [13,15].The telecom network can be divided into three segments: access, aggregation and core (Fig. 1a). The access network is the interface between subscribers and the immediate service provider. The aggregation network aggregates all the input data streams from tributary access networks, converging towards the higher-level core network. The aggregation network includes local and metropolitan networks, which then converge to regional networks. A local area network (LAN) interconnects computers within a limited area, such as a residence, school, laboratory, university or office building. A metropolitan area network (MAN) interconnects us...

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Section: Graphene-based Modulatorsmentioning

confidence: 99%

Section: Graphene-based Modulatorsmentioning

confidence: 99%

Graphene-based integrated photonics for next-generation datacom and telecom

Romagnoli¹,

Sorianello²,

et al. 2018

View full text Add to dashboard Cite

show abstract

“…Similar to previously demonstrated pure Si MOS modulators, this heterogeneous MOS capacitor is extremely useful to introduce the plasma dispersion effect [38] into the heterogeneous photonic device platform. EOMs using InGaAsP/Si hybrid MOS capacitors have been demonstrated [104,105]. The optical mode has a large overlap with carriers in the n-InGaAsP/Al 2 O 3 /p-Si MOS capacitor that achieves a voltagelength product as low as 0.047 V•cm which has almost 5× smaller than a typical hybrid III-V silicon modulator.…”

Section: Hybrid Electro-optic Modulatorsmentioning

confidence: 99%

“…As listed in Table 5, modulators can be operated at much higher data rates than their bandwidths by implementing pre-emphasis equalization such as a finite impulse response (FIR) filter [70,105]. Additionally, advanced modulation techniques such as PAM4 [76,104] and duo-binary [100] are another alternative to increase the data rate. As listed in Table 5, modulators with higher modulation efficiency, e.g., high-Q modulators and hybrid III-V on silicon modulators, usually own higher energy efficiency due to the smaller footprint or lower driving voltage.…”

Section: Hybrid Electro-optic Modulatorsmentioning

confidence: 99%

Modulation on Silicon for Datacom: Past, Present, and Future (Invited Review)

Wang¹,

Huang²,

Chen³

et al. 2019

PIER

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Datacenters become an important part of technical infrastructure. The Datacom traffic grows exponentially to satisfy the demands in IT services, storage, communications, and networking to the growing number of networked devices and users. High bandwidth and energy efficient optical interconnects are critical to improve overall productivity and efficiency in data centers. Mega-data centers are expected to address the power consumption and the cost in which optical interconnects contribute quite a large part. Silicon photonics is a promising platform to offer savings in power and potential increase in bandwidth for Datacom. Several modulation techniques are developed in silicon photonics to reduce the optical mode volume or enhance the light matter effect to further improve the modulation efficiency. Many other materials such as III-V and LiNbO 3 are integrated on silicon photonics to maximize the optical link performance. This paper reviews several modulation techniques for Datacom, from vertical-cavity surface-emitting laser (VCSEL) direct modulation to silicon photonics modulators then to hybrid silicon modulators.

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“…State-of-the-art silicon on-off keying (OOK) modulators are currently reaching 50-Gb/s operation, [4][5], while higher modulation format such as n-level pulse amplitude modulation (PAM-n), quadrature phase-shift keying (QPSK), or 16-state quadrature amplitude modulation (16-QAM) allow to increase transmission rate up to 224 Gb/s [6][7][8][9][10][11][12]. As a major step forward, the phase efficiency of the modulators has recently been significantly increased [13][14]. While most of the reported work has been done in the C-band of telecommunication (around 1550 nm), silicon photonics systems are highly attractive for short-distance intra-data-center communications [15], where the O-band (around 1300 nm) is widely used.…”

mentioning

confidence: 99%

QPSK Modulation in the O-Band Using a Single Dual-Drive Mach–Zehnder Silicon Modulator

Pérez-Galacho

Bramerie

Baudot

et al. 2018

J. Lightwave Technol.

Self Cite

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Keeping up with bandwidth requirements in next generation short-and long-reach optical communication systems will require migrating from simple modulation formats such as on-off keying (OOK) to more advanced formats such as quadrature phase-shift keying (QPSK). In this work, we report the first demonstration of QPSK signal generation in the O-Band using a silicon dual-drive Mach-Zehnder modulator (DD-MZM). The performance of the silicon DD-MZM is assessed at 20 Gb/s and compared against a similar DD-MZM based on LiNbO3, showing a limited implementation power penalty of only 1.5 dB.

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Efficient low-loss InGaAsP/Si hybrid MOS optical modulator

Cited by 179 publications

References 29 publications

Graphene-based integrated photonics for next-generation datacom and telecom

Graphene-based integrated photonics for next-generation datacom and telecom

Modulation on Silicon for Datacom: Past, Present, and Future (Invited Review)

QPSK Modulation in the O-Band Using a Single Dual-Drive Mach–Zehnder Silicon Modulator

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