Efficient light harvesting in dye sensitized solar cells using broadband surface plasmon resonance of silver nanoparticles with varied shapes and sizes

Joshi, Dhavalkumar N.; Mandal, Sudip; Ramanujam, Kothandaraman; Ramaswamy, Arun Prasath

doi:10.1016/j.matlet.2017.02.008

Cited by 12 publications

(7 citation statements)

References 16 publications

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“…For example, in TiO 2 and BiVO 4 , the major contribution in CBM comes from Ti and V, thus, doping with cations possessing higher atomic d orbital energy (e.g., 3d, 4d, and 5d transition elements) can change the position of CBM . Further, cocatalysts and plasmonic particle can be used to improve light absorption and charge separation kinetics. , It is worth mentioning that our computed band edge positions follow the same trend with the existing literature (Table ), such as CBM and VBM of the (101̅0) Wurt-ZnO surface are higher than the (112̅0) surface, whereas CBM and VBM of (101̅0) surface of Wurt-CdSe are found to be lower than the (112̅0) surface …”

Section: Results and Discussionsupporting

confidence: 79%

“…55 Further, cocatalysts and plasmonic particle can be used to improve light absorption and charge separation kinetics. 56,57 It is worth mentioning that our computed band edge positions follow the same trend with the existing literature (Table 1), such as CBM and VBM of the (101̅ 0) Wurt-ZnO surface are higher than the (112̅ 0) surface, whereas CBM and VBM of (101̅ 0) surface of Wurt-CdSe are found to be lower than the (112̅ 0) surface. 43 C. Possible Combinations of Type-II Isomaterials and Heteromaterials Heterostructures.…”

Section: Resultsmentioning

confidence: 99%

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Coherency and Lattice Misfit Strain Critically Constrains Electron–Hole Separation in Isomaterial and Heteromaterial Type-II Heterostructures

2019

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Semiconductors with appropriate band-gaps, band-edges, and lower lattice misfit strain have been assembled to form type II heterostructures to promote the electron–hole separation for photoelectrochemical water splitting. For efficient design of type-II coherent heterostructures, it is essential to calibrate the band gaps, band edge positions, bonding, and lattice misfit strain at the interface. To this end, we apply the first principle study to screen type-II heterostructures by exploring “native” and “non-native” structures of widely used semiconductor materials such as TiO2, ZnO, BiVO4, CdSe, and ZnS. “Non-native” structures differ from the “native” (ground state) structure of bulk crystals in terms of discrete translational symmetry. Due to a change in discrete translational symmetry, atomic, and electronic properties of native and non-native materials are expected to be different. The screening process is based on three criteria: band edges, type-II band alignment between two semiconductors, and identification of coherent interfaces between them. Band edge calculations show that most of the polymorphs are not only suitable for oxygen evolution reaction, but also for the hydrogen evolution reaction. On the basis of band edge positions, several isomaterial and heteromaterial type-II combinations of heterostructures have been explored in which 221 (out of 297) materials have type-II combinations, including many combinations that have not yet been explored experimentally. However, a requirement of the complementary translation symmetry and motif positions to minimize lattice mismatch brings down the possibilities to 19 misfit strained coherent interfaces (e.g., WZ (101̅0)-ZnS/ZB (110)-ZnO). This study points to the centrality of constraints of the coherency of the interface in determining the efficiency of electron–hole separation.

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Section: Results and Discussionsupporting

confidence: 79%

Section: Resultsmentioning

confidence: 99%

Coherency and Lattice Misfit Strain Critically Constrains Electron–Hole Separation in Isomaterial and Heteromaterial Type-II Heterostructures

2019

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“…Results are shown in Figure a,b and Table . We calculated the band gap energy with eqs 1–6. − As shown in the table, the band gap energy of 1% G/MCS@Gallic was lower than that of MCS or G/MCS. In terms of edge functionalization of the structure, the band edge of the MCS valence band comprised a filled nonbonding O 2p orbital, while the unoccupied conduction band originated from antibonding π interaction in the 1% G/MCS@Gallic structure.…”

Section: Resultsmentioning

confidence: 99%

A New Aspect for Band Gap Energy of Graphene-Mg₂CuSnCoO₆-Gallic Acid as a Counter Electrode for Enhancing Dye-Sensitized Solar Cell Performance

Areerob

2019

ACS Appl. Mater. Interfaces

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To develop counter electrodes (CEs) for dye-sensitized solar cells (DSSCs), band gap energy of quaternary semiconductor materials is of great interest. In the present study, a novel graphene sheet based on Mg2CuSnCoO6-Gallic acid nanomaterials (G/MCS@Gallic) was modified with a new Joule heating method, and a laser was applied for measuring band gap energy. Synergistic effect between graphene and Mg2CuSnCoO6-Gallic ensured excellent electron transport through the electrode and low band gap energy. The large surface area of the hybrid graphene materials rivaled the catalytic capability for iodide reduction. DSSCs achieved a maximum photoelectric conversion efficiency of 13.30% based on the 10% G/MCS@Gallic CE, which was higher than the platinum conversion efficiency. Thus, G/MCS@Gallic provides a novel, inexpensive, high-performance, and flexible cathode for solar cell applications.

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“…Further, a PEC water oxidation study with an oxidation cocatalyst suggests that compared with the parent BiVO 4 electrode, MnO x deposited on the (110) facet has the highest current density due to enhanced facet-dependent charge separation. Hence, separation kinetics and light absorption ability of the material can be further improved by use of cocatalysts and plasmonic particles. , Han et al have grown (001) facets of BiVO 4 by pulse laser deposition and show superb intrinsic charge transport properties and surface reactivity. Similar observations on anisotropic conductivity are present in the literature; for example, Iordanova et al have shown that the electrical conductivity of the (001) basal plane of hematite (α-Fe 2 O 3 ) is higher (4 orders of magnitude) than that perpendicular to the (001) plane.…”

Section: Introductionmentioning

confidence: 99%

Deconvoluting Photoelectrochemical Activity in Monoclinic–Scheelite BiVO₄ Facet Selected Thin Films

et al. 2022

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Crystal facet engineering is one of the promising strategies to tune the band edge positions and surface electrochemistry of a material, which are essential to improve photoelectrochemical (PEC) water splitting. Materials with low-crystal symmetry structures demonstrate facet-dependent properties due to asymmetric coordination, and facet engineering can modulate PEC properties. In this regard, different facets [e.g., (002), (121), and (040)] of the monoclinic–scheelite polymorph of BiVO4 (low-crystal symmetry structure) have been grown by controlling the thickness (deposition time) of thin films [22 nm (10 s) to 265 nm (50 s)] by the electron beam deposition technique. X-ray diffraction and high-resolution transmission electron microscopy analysis suggest the presence of different exposed planes that display different EC and PEC activity. PEC water splitting measurements suggest that the 110 nm/30 s thin-film sample, that is, the (040) facet, has the highest current density, that is, 0.29 mA/cm2 (under light) and 0.068 mA/cm2 (under dark) at 1.8 V versus RHE. However, the applied bias photon to current efficiencies (ABPEs) of both the thin films, that is, (040)/30 s and (121)/40 s facets, are nearly equal, whereas (121)/40 s has enhanced electrical and solar power-to-hydrogen (ESPH) conversion efficiencies compared to the (040)/30 s facet sample. Band edge positions computed via density functional simulations of exposed surfaces suggest that different facets have different band edge positions, thereby offering different driving forces to perform oxygen evolution reaction (OER). The relation between efficiency (ABPE and ESPH) and driving force suggests that the enhanced PEC performance of the (040) facet of BiVO4 is due to the increased driving force to perform OER, whereas the improved efficiency of (121)/40 s can be due to enhanced surface catalytic activity. The highest catalytic activity of the (040)/30 s sample is due to low electron–hole recombination in the bulk and maximum charge injection at the surface.

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Efficient light harvesting in dye sensitized solar cells using broadband surface plasmon resonance of silver nanoparticles with varied shapes and sizes

Cited by 12 publications

References 16 publications

Coherency and Lattice Misfit Strain Critically Constrains Electron–Hole Separation in Isomaterial and Heteromaterial Type-II Heterostructures

Coherency and Lattice Misfit Strain Critically Constrains Electron–Hole Separation in Isomaterial and Heteromaterial Type-II Heterostructures

A New Aspect for Band Gap Energy of Graphene-Mg₂CuSnCoO₆-Gallic Acid as a Counter Electrode for Enhancing Dye-Sensitized Solar Cell Performance

Deconvoluting Photoelectrochemical Activity in Monoclinic–Scheelite BiVO₄ Facet Selected Thin Films

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Efficient light harvesting in dye sensitized solar cells using broadband surface plasmon resonance of silver nanoparticles with varied shapes and sizes

Cited by 12 publications

References 16 publications

Coherency and Lattice Misfit Strain Critically Constrains Electron–Hole Separation in Isomaterial and Heteromaterial Type-II Heterostructures

Coherency and Lattice Misfit Strain Critically Constrains Electron–Hole Separation in Isomaterial and Heteromaterial Type-II Heterostructures

A New Aspect for Band Gap Energy of Graphene-Mg2CuSnCoO6-Gallic Acid as a Counter Electrode for Enhancing Dye-Sensitized Solar Cell Performance

Deconvoluting Photoelectrochemical Activity in Monoclinic–Scheelite BiVO4 Facet Selected Thin Films

Contact Info

Product

Resources

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A New Aspect for Band Gap Energy of Graphene-Mg₂CuSnCoO₆-Gallic Acid as a Counter Electrode for Enhancing Dye-Sensitized Solar Cell Performance

Deconvoluting Photoelectrochemical Activity in Monoclinic–Scheelite BiVO₄ Facet Selected Thin Films