Efficient Infrared Solar Cells Employing Quantum Dot Solids with Strong Inter‐Dot Coupling and Efficient Passivation

Liu, Sisi; Zhang, Chongjian; Li, Shuangyuan; Xia, Yong; Wang, Kang; Xiong, Kao; Tang, Haodong; Lian, Linyuan; Liu, Xinxing; Li, Mingyu; Tan, Mingyi; Gao, Liang; Niu, Guangda; Liu, Huan; Song, Haisheng; Zhang, Daoli; Gao, Jianbo; Lan, Xinzheng; Wang, Kai; Sun, Xiao Wei; Yang, Ye; Tang, Jiang; Zhang, Jianbing

doi:10.1002/adfm.202006864

Cited by 19 publications

(25 citation statements)

References 35 publications

(54 reference statements)

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“…The PbSe QDs were synthesized by an advanced cation exchange method, as described in detail in the Methods section. The resulting QD surface was capped with long-chain oleate and chloride with exposed facets of (111) and (100) (Figure a). , As the size of the QD increases, the proportion of nonpolar (100) facets constituted by Pb and Se atoms increases and correspondingly the polar (111) facets formed by only Pb atoms decrease. , The exposed Se atoms on (100) facets are prone to oxidization and etching by water and oxygen.…”

Section: Results and Discussionmentioning

confidence: 99%

“…The PbSe QDs were synthesized by an advanced cation exchange method, 36 as described in detail in the Methods section. The resulting QD surface was capped with long-chain oleate and chloride with exposed facets of (111) and (100) (Figure 1a).…”

Section: Resultsmentioning

confidence: 99%

“…The ZnO electron transporting layer (ETL) was first deposited on ITO glass by spin-coating the ZnO sol–gel precursor prepared according to previous methods. , Next, ligand-exchanged PbSe QD in a DMF/BTA solution was spin-coated onto a ZnO/ITO substrate at 2500 rpm for 50 s to form a photoactive layer. The films were annealed at 85 °C for 5 min in a nitrogen environment to volatilize the residual solvent.…”

Section: Methodsmentioning

confidence: 99%

“…Recently, we epitaxially coated a thin PbS shell on PbSe QDs to protect the QD surface. However, this is still a trade-off strategy between carrier transport and surface passivation; that is, the PbS shell reduces carrier transport in the QD solids …”

Section: Introductionmentioning

confidence: 99%

“…However, this is still a trade-off strategy between carrier transport and surface passivation; that is, the PbS shell reduces carrier transport in the QD solids. 36 To solve the inferior trap-state control of PbSe QDs, we develop a hybrid ligand co-passivation strategy that combines metal cations (CdCl 2 ) and the commonly used halide anions (PbI 2 , PbBr 2 ) to achieve a precisely positioned passivation with halide anions on the Pb sites and the metal cations on the Se sites. Interestingly, the introduction of metal cations facilitates the attachment of halide anions to Pb atoms, further resulting in a closer surface ligand packing.…”

Section: Introductionmentioning

confidence: 99%

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Efficiently Passivated PbSe Quantum Dot Solids for Infrared Photovoltaics

et al. 2021

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Infrared (IR) solar cells are promising devices for significantly improving the power conversion efficiency of common solar cells by harvesting the low-energy IR photons. PbSe quantum dots (QDs) are superior IR photon absorbing materials due to their strong quantum confinement and thus strong interdot electronic coupling. However, the high chemical activity of PbSe QDs leads to etching and poor passivation in ligand exchange, resulting in a high trap-state density and a high open circuit voltage (V OC) deficit. Here we develop a hybrid ligand co-passivation strategy to simultaneously passivate the Pb and Se sites; that is, halide anions passivate the Pb sites and Cd cations passivate the Se sites. The cation and anion hybrid passivation substantially improves the quality of PbSe QD solids, giving rise to an excellent trap-state control and prolonged carrier lifetime. A high V OC and a high short circuit current density (J SC) are achieved simultaneously in the IR QD solar cells based on this hybrid ligand treatment. Finally, a IR-PCE of 1.31% under the 1100-nm-filtered solar illumination is achieved in the PbSe QD solar cells, which is the highest IR-PCE for PbSe QD IR solar cells at present. Additionally, the PbSe QD devices show a high external quantum efficiency of 80% at ∼1295 nm.

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Section: Results and Discussionmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Section: Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Efficiently Passivated PbSe Quantum Dot Solids for Infrared Photovoltaics

et al. 2021

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Efficient PbSe Quantum Dot Infrared Photovoltaic Applying MXene Modified ZnO Electron Transport Layer

Liu

Wang

Xiong

et al. 2023

Advanced Optical Materials

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Infrared (IR) solar cells are potential optoelectronic devices for boosting the power conversion efficiency (PCE) of conventional photovoltaics (such as pervoskite and silicon solar cells) by broadening the utilization range of the sunlight spectrum to short‐wavelength infrared region. PbSe colloidal quantum dots (QDs) are one of the optimal candidates for IR solar cells because of their tunable bandgap in the IR region and flexible solution processibility. At present, the best PbSe QD IR photovoltaics generally adopt ZnO as an electron transport layer (ETL). However, the intrinsic drawbacks and surface defects of ZnO can potentially deteriorate the PCE of devices. Herein, Ti3C2Tx, a representative 2D transition carbide, is combined with sol‐gel ZnO to develop a new hybrid ETL for fabricating high‐performance IR solar cells. This combination effectively suppresses the defects within ZnO by forming new bondings and simultaneously enhances the crystalline of ZnO film. Meanwhile, the introduction of Ti3C2Tx into ZnO film accelerates the transport and collection of photo‐generated carriers by constructing a new electron transport pathway. Consequently, compared to the bare devices, the infrared PCE of PbSe QD solar cells increases by 19.5% to 1.04%. These results demonstrate that this hybrid ETL can offer a bright approach for developing high‐performance optoelectronic devices.

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Efficient Quantum Dot Infrared Photovoltaic with Enhanced Charge Extraction via Applying Gradient Electron Transport Layers

Liu,

Deng,

Wang

et al. 2024

Advanced Optical Materials

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PbS quantum dot (QD) infrared (IR) solar cells that can absorb low‐energy photons are promising photovoltaic devices to improve utilization of sunlight energy by broadening absorption range of the sunlight spectrum to short‐wave infrared region. For PbS QD photovoltaics, depleted heterojunction established between photoactive layer and ZnO electron transport layer (ETL) is critical to determine the performance of devices. However, undesired defects in ZnO films and mismatched energy levels have limited the improvement of device properties. Herein, a novel and simple gradient ZnO ETL is developed for achieving high‐performance QD IR solar cells by depositing a Cs‐doped ZnO thin layer on the pristine ZnO film. The resulting gradient ETL exhibits significantly suppressive trap states and a much smoother surface, efficiently reducing the trap‐assisted nonradiative recombination at the interfaces. Meanwhile, realigned energy levels of the gradient ZnO ETL facilitate the transport and extraction of photogenerated carriers. As a result, the champion device shows a high IR open circuit voltage (VOC) of 0.446 V and IR power conversion efficiency (PCE) of 1.27% under 1100 nm filtered illumination. The VOC and PCE are 0.507 V and 11.04% under AM1.5 illumination, respectively. These results demonstrate a promising strategy for exploiting high‐performance infrared optoelectronic devices.

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Efficient Infrared Solar Cells Employing Quantum Dot Solids with Strong Inter‐Dot Coupling and Efficient Passivation

Cited by 19 publications

References 35 publications

Efficiently Passivated PbSe Quantum Dot Solids for Infrared Photovoltaics

Efficiently Passivated PbSe Quantum Dot Solids for Infrared Photovoltaics

Efficient PbSe Quantum Dot Infrared Photovoltaic Applying MXene Modified ZnO Electron Transport Layer

Efficient Quantum Dot Infrared Photovoltaic with Enhanced Charge Extraction via Applying Gradient Electron Transport Layers

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