2015
DOI: 10.1002/cphc.201402898
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Efficient Emission Facilitated by Multiple Energy Level Transitions in Uniform Graphitic Carbon Nitride Films Deposited by Thermal Vapor Condensation

Abstract: Graphitic carbon nitride (g-CN) films are important components of optoelectronic devices, but current techniques for their production, such as drop casting and spin coating, fail to deliver uniform and pinhole-free g-CN films on solid substrates. Here, versatile, cost-effective, and large-area growth of uniform and pinhole-free g-CN films is achieved by using a thermal vapor condensation method under atmospheric pressure. A comparison of the X-ray diffraction and Fourier transform infrared data with the calcul… Show more

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Cited by 75 publications
(116 citation statements)
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“…High extinction coefficients in polymeric semiconductors are mostly due to a very high density of states and high transition dipole moments and were recently also attributed to high orientation and high stiffness of the polymer chains . The extinction coefficient reveals a pronounced absorption shoulder at about 3.37 eV (λ ≈ 370 nm) attributed to π–π* transitions, in good agreement with bulk pCN (Figure S9, Supporting Information) and previous reports on pCN thin films . However, we cannot exclude at this stage also a minor contribution to the absorption due to trap states.…”
supporting
confidence: 87%
See 1 more Smart Citation
“…High extinction coefficients in polymeric semiconductors are mostly due to a very high density of states and high transition dipole moments and were recently also attributed to high orientation and high stiffness of the polymer chains . The extinction coefficient reveals a pronounced absorption shoulder at about 3.37 eV (λ ≈ 370 nm) attributed to π–π* transitions, in good agreement with bulk pCN (Figure S9, Supporting Information) and previous reports on pCN thin films . However, we cannot exclude at this stage also a minor contribution to the absorption due to trap states.…”
supporting
confidence: 87%
“…The excitation versus emission contour plot shows that for the peak wavelength of photoluminescence emission, i.e., 466 nm, two main excitation modes with maxima at 275 and 375 nm are present. The two excitation maxima are attributed to π–π* electronic transitions in pCN thin films, whereas, the lone pair‐π* transition appears as a shoulder at about 394 nm . However, the emission processes in pCN are complex and still under debate in the scientific community .…”
mentioning
confidence: 99%
“…The uniform density distribution over film cross-section is observable. It is important to note that commonly used p-CN thermal vapor condensation methods utilizing precursors materials are not effective as the film thickness control problem is not resolved [80]. The method proposed in this work utilizes p-CN as a precursor and deposition is performed at controlled thickness.…”
Section: Structural and Chemical Properties Of C 3 N Filmmentioning
confidence: 98%
“…In a typical PEC, the photoanode is composed of a light harvester attached to a wide band gap semiconductor (i.e., TiO 2 , ZnO) that serves as electrons acceptor layer while the holes are transferred to the counter electrode through the electrolyte solution. [18][19][20][21][22] The PEC operation is considered to be more complicated compared to the photocatalysis process due be extracted by the redox electrolyte (path 3). [4,5] Particularly, in the photoanode, excited states electrons of the light harvester must be injected into the conduction band of a wide band gap semiconductor prior their self-recombination (either radiatively or nonradiatively).…”
Section: Doi: 101002/admi201600265mentioning
confidence: 99%