Efficient coupling of disorder states to excitons in an InGaN nanostructure

Nelson, Cameron; Ra, Yong–Ho; Mi, Zetian; Steel, Duncan G.

doi:10.1103/physrevb.98.081201

Cited by 2 publications

(3 citation statements)

References 37 publications

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“…38 Excitons could couple to a larger density of disorder states, which can absorb light and decay non-radiatively to excitons. 39 It is highly possible that these disorders and localized states have different symmetry and selection rules. Donor-bound excitons and phonon-assisted optical transitions can also modify the selection rules of radiative recombination due to the impurity site symmetries and phonon symmetries.…”

Section: Resultsmentioning

confidence: 99%

“…These In–N condensates trap holes to form localized excitons and radiatively recombine . Excitons could couple to a larger density of disorder states, which can absorb light and decay non-radiatively to excitons . It is highly possible that these disorders and localized states have different symmetry and selection rules.…”

Section: Resultsmentioning

confidence: 99%

“…Disorder or localized states are also responsible for radiative and non-radiative recombination. , Atomically, IGN is inhomogeneous with many In–N condensates. These In–N condensates trap holes to form localized excitons and radiatively recombine .…”

Section: Resultsmentioning

confidence: 99%

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Anisotropic Two-Photon Excited Photoluminescence and Optical Constants of InGaN Nanowires

Sundin

Das

Kolluri

et al. 2023

ACS Appl. Opt. Mater.

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Gallium nitride (GaN) and its derivatives are important materials for optoelectronic and electronic applications, such as light-emitting diodes, solid-state lasers, optical modulators, artificial photosynthesis, etc. Controlled growth and manipulation of these materials at nanoscale dimensions and understanding their linear and nonlinear optical properties lay the foundation for developing next-generation optoelectronic and electronic devices. In this context, herein, we report on the two-photon absorption and anisotropic two-photon excited photoluminescence of InGaN (IGN) nanowires grown by molecular beam epitaxy. The IGN nanowires were imaged using a home-built two-photon photoluminescence microscope with a tunable femtosecond laser to excite over the near-IR range (690−950 nm). In addition, the polarization angle of the excitation electric field was also rotated, and the emitted photoluminescence was analyzed with a polarizer. Results showed polarized photoluminescence with a stronger signal in the direction perpendicular to the IGN nanowires' axis. Also, we observed strong two-photon absorption above the bandgap, with several excitation spectrum peaks near 740, 790, and 870 nm. These peaks showed anisotropic response to the excitation polarization angle, which may be due to the anisotropy of the IGN nanowires' wurtzite phase. The polarized light absorption and emission nature of IGN nanowires, as revealed in this work, may be useful for optimizing materials for future optoelectronic device applications.

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Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

See 1 more Smart Citation

Anisotropic Two-Photon Excited Photoluminescence and Optical Constants of InGaN Nanowires

Sundin

Das

Kolluri

et al. 2023

ACS Appl. Opt. Mater.

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Systematic Investigations of the Structural, Elastic, and Thermal Properties of c‐BAs by First‐Principles Calculations

Chen

Yang

et al. 2023

Physica Status Solidi (b)

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The structure, elastic properties, and thermodynamic properties of cubic boron arsenide (c‐BAs) under high temperature and high pressure are studied based on first‐principles calculations. The obtained equilibrium structure and mechanical properties are in good agreement with other theoretical results. First, the phonon dispersion spectra at zero pressure and high pressure are calculated. The results show that c‐BAs is dynamically stable under pressure of 0–110 GPa. Second, the lattice constants, elastic constants, Young's modulus, bulk modulus, shear modulus, Poisson's ratio, B/G, sound velocity, and Debye temperature of c‐BAs under zero pressure and high pressure are calculated. c‐BAs are predicted to be unstable above 112.3 GPa in accordance with the elastic stability criterion. Furthermore, it is indicated by the calculated B/G ratio that c‐BAs is brittle at zero GPa and begins to tend to be ductile as pressure rises to 46.4 GPa. The calculated elastic anisotropy coefficients indicate that c‐BAs has elastic anisotropy. The thermodynamic properties of c‐BAs are investigated at high temperatures and pressures by combining generalized density function theory and the quasiharmonic Debye model. It is suggested by the calculated elastic and thermodynamic properties that c‐BAs can be used as candidate structures for the fabrication of efficient solar cells and thermoelectric materials.

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Efficient coupling of disorder states to excitons in an InGaN nanostructure

Cited by 2 publications

References 37 publications

Anisotropic Two-Photon Excited Photoluminescence and Optical Constants of InGaN Nanowires

Anisotropic Two-Photon Excited Photoluminescence and Optical Constants of InGaN Nanowires

Systematic Investigations of the Structural, Elastic, and Thermal Properties of c‐BAs by First‐Principles Calculations

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