Efficient charge transport in surface engineered TiO2 nanoparticulate photoanodes leading to improved performance in quantum dot sensitized solar cells

Perovskite Solar Cells with Low-Cost TiO2 Mesoporous Photoanodes Prepared by Rapid Low-Temperature (70 °C) Plasma Processing

“…In addition, Cojocaru et al have reported on increased short-circuit photocurrent density and open-circuit voltage in PSCs with increased surface oxygen vacancies . Other approaches to plasma-treated photoanodes include CO 2 , H 2 , He, and Ar plasmas rendering various effects.…”

Solution-processed two-dimensional materials for next-generation photovoltaics

“…Different types of QDSC architectures have been proposed: (1) Schottky QDSCs, which consist of a heterojunction between a planar film of p-type colloidal QDs and a shallow-F w metal, which produce a Schottky barrier generating a depletion region for carrier separation; [1308][1309][1310][1311][1312][1313] (2) depleted heterojunction QDSCs, which use a highly doped n-type metal oxide (typically, TiO 2 or ZnO, but even metal chalcogenides, e.g., CdS) in a p-n heterojunction with a p-type QD film; [1314][1315][1316] (3) heterojunction QDSCs, also referred to as QD-sensitized solar cells (QDSSCs), in which the n-type wideband-gap semiconductor and QD film form an interpenetrating layer. 1296,1301,[1317][1318][1319][1320][1321][1322][1323][1324][1325] This structure is usually obtained by infiltrating QDs into the structured n-type semiconductors. Since this architecture resembles that of DSSCs, such cells are often referred to as QD-based DSSCs (QDDSSCs) (see Section 5); (4) quantum junction QDSCs, which consist of a homojunction-like architecture where both p-and ntype materials of the junction are composed of QDs; 1326 (5) bulk nanoheterojunction SCs in which an n-type material and p-type QDs are mixed similar to a BHJ architecture.…”

Improving the Power‐Conversion Efficiency through Alloying in Common Anion CdZnX (X=S, Se) Nanocrystal Sensitized Solar Cells

“…[15,31,[36][37][38][39][40][41] Briefly, TiO 2 photoanodes with transparent layer were prepared through doctor blade technique followed by annealing at 450°C for 30 minutes. [15,31,[36][37][38][39][40][41] Briefly, TiO 2 photoanodes with transparent layer were prepared through doctor blade technique followed by annealing at 450°C for 30 minutes.…”

“…The device fabrication protocol used here was originally developed by Zhong et al and subsequently modified by our group. [15,31,[36][37][38][39][40][41] Briefly, TiO 2 photoanodes with transparent layer were prepared through doctor blade technique followed by annealing at 450°C for 30 minutes. Then the photoanodes were coated with scattering TiO 2 layer and annealed again at 450°C for 30 minutes.…”