“…However, even in nitrogen-filled gloveboxes, the oxidation from Sn 2+ to Sn 4+ is thermodynamically favored, resulting in undesired high p-doping carrier concentration associated with Sn vacancy defects in Sn-based perovskite films. ,, To date, substantial efforts have been extensively devoted to additive engineering to address the performance of Sn PSCs; for instance, using reductant additives, including pyrazine, hydrazine, Sn powder, Sn nanoparticles, and phenylhydrazine hydrochloride, has also been reported and shown to be a promising method. ,, Besides, for Pb and Sn-based PSC, substantial impacts of formate and formic acid have been found. − However, although these strategies can solve the stability problem to some extent, the film quality could be deteriorated by increasing the additive dosage. In addition, several bulky ammonium cations could only act as an interface passivator in Sn-based PSCs but not change the shallow bulk and interface chemical environment . Alternatively, interfacial engineering of Sn-based PSCs has recently been presented as a potential method for overcoming the stability issue of Sn-based perovskite films while also enhancing the photovoltaic performance of Sn-based PSCs. , Hence, it is critical to develop effective interfacial modification strategies for further improving the performance of Sn-based PSCs.…”