Efficient and scalable perovskite solar cells achieved by buried interface engineering

Wang, Tao; Qiao, Liang; Ye, Tianshi; Kong, Weiyu; Zeng, Fang; Zhang, Yao; Sun, Ruitian; Zhang, Lin; Chen, Han; Zheng, Rongkun; Yang, Xudong

doi:10.1039/d2ta04381e

Cited by 13 publications

(6 citation statements)

References 43 publications

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“…of perovskite film on the substrate, forming high-quality perovskite films both in the bulk and the buried interface, which is thought to increase the activation energy and improve the stability of the thermal decomposition of perovskite films. [76][77][78] Meanwhile, the ANS treatment can improve the extraction and transport of carriers, and reduces the charge accumulation at the interface, which is also considered to be the key to improve the stability of the device under bias, thermal and light conditions. [79,80] Figure 4f shows a comparison of the PCE values reported so far for microcrystalline silicon, amorphous silicon, dye-sensitized solar cells, organic solar cells, and PIPV devices.…”

Section: Resultsmentioning

confidence: 99%

Ion–Dipole Interaction Enabling Highly Efficient CsPbI₃ Perovskite Indoor Photovoltaics

Wang

et al. 2023

Advanced Materials

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Metal halide perovskites are ideal candidates for indoor photovoltaics (IPVs) because of their easy‐to‐adjust bandgaps, which can be designed to cover the spectrum of any artificial light source. However, the serious non‐radiative carrier recombination under low light illumination restrains the application of perovskite‐based IPVs (PIPVs). Herein, polar molecules of amino naphthalene sulfonates are employed to functionalize the TiO2 substrate, anchoring the CsPbI3 perovskite crystal grains with a strong ion–dipole interaction between the molecule‐level polar interlayer and the ionic perovskite film. The resulting high‐quality CsPbI3 films with the merit of defect‐immunity and large shunt resistance under low light conditions enable the corresponding PIPVs with an indoor power conversion efficiency of up to 41.2% (Pin: 334.11 µW cm−2, Pout: 137.66 µW cm−2) under illumination from a commonly used indoor light‐emitting diode light source (2956 K, 1062 lux). Furthermore, the device also achieves efficiencies of 29.45% (Pout: 9.80 µW cm−2) and 32.54% (Pout: 54.34 µW cm−2) at 106 (Pin: 33.84 µW cm−2) and 522 lux (Pin: 168.21 µW cm−2), respectively.

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Section: Resultsmentioning

confidence: 99%

Ion–Dipole Interaction Enabling Highly Efficient CsPbI₃ Perovskite Indoor Photovoltaics

Wang

et al. 2023

Advanced Materials

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“…For Sn-based PSCs, carrier recombination easily starts from the top and embedded bottom interfaces, where defects are enriched . Therefore, buried interface engineering can not only reduce the defects at the interface but also inhibit the degradation of the device derived from the buried interface. , Liu group introduced guanidine thiocyanate (GASCN) to modify top interfaces onto the surface of MAPbI 3 . Furthermore, for p–i–n devices, the carrier transport rate at the buried bottom interfaces is lower than that of top interfaces .…”

Section: Introductionmentioning

confidence: 99%

Buried Interface Modification via Guanidine Thiocyanate for High-Performance Lead-Free Perovskite Solar Cells

et al. 2023

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Tin perovskites with exceptional optoelectronic properties have gained tremendous attention in environmentally friendly solar cells. However, it is still challenging to fabricate high-quality tin perovskite films with preferred crystal orientation and low interface defects by solvent engineering. Herein, a buried interface modification strategy (BIMS) is proposed to modify the interfaces between the hole transport layer and perovskite film. GA+ ions form tailored two-dimensional perovskites at the buried interface, inducing the template growth of Sn perovskite crystals with preferential orientation along the (100) plane. Moreover, the thiocyanate (SCN–) ions generate strong electrostatic attraction with uncoordinated Sn2+ ions, affecting its localized electron density around the buried interfaces and enhancing vacancy formation energy. As a result, the highest power conversion efficiency (PCE) of the perovskite solar cells (PSCs) via BIMS reaches up to 8.6%. Interestingly, the unencapsulated PSC remains at 80% of the initial PCE for 600 h after continuous 1 sun illumination at 55 °C under a nitrogen atmosphere. This study explicitly paves a novel and general strategy for developing high-performance lead-free PSCs.

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“…[20][21][22][23][24][25] However, all-perovskite tandem solar cells with these alternative HTLs in mixed Pb-Sn sub-cells have either not yet been demonstrated or exhibited far inferior photovoltaic (PV) performance than those using PEDOT : PSS. [26][27][28][29] At present, SAMs have been proved to be a promising HTL for efficient pure-Pb PSCs. [30][31][32][33][34] Nevertheless, all-perovskite tandem solar cells only using SAMsbased HTL without PEDOT : PSS have not yet been reported, possibly because of the poor wetting behavior of perovskite precursor solution on hydrophobic SAMs (Figure 1a and Figure S2, Supporting Information) and mismatched energy-level alignment between mixed Pb-Sn perovskites and SAMs.…”

Section: Introductionmentioning

confidence: 99%

“…Efforts have been attempted to develop thermally stable and more transparent HTLs for mixed Pb‐Sn PSCs, such as poly[bis(4‐phenyl)(2,4,6‐trimethylphenyl)amine] (PTAA), nickel oxide (NiO x ) and self‐assembled monolayer (SAM) [20–25] . However, all‐perovskite tandem solar cells with these alternative HTLs in mixed Pb‐Sn sub‐cells have either not yet been demonstrated or exhibited far inferior photovoltaic (PV) performance than those using PEDOT : PSS [26–29] . At present, SAMs have been proved to be a promising HTL for efficient pure‐Pb PSCs [30–34] .…”

Section: Introductionmentioning

confidence: 99%

Efficient All‐Perovskite Tandem Solar Cells with Low‐Optical‐Loss Carbazolyl Interconnecting Layers

Liu,

Lin,

Wang

et al. 2023

Angew Chem Int Ed

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Combining wide‐bandgap (WBG) and narrow‐bandgap (NBG) perovskites with interconnecting layers (ICLs) to construct monolithic all‐perovskite tandem solar cell is an effective way to achieve high power conversion efficiency (PCE). However, optical losses from ICLs need to be further reduced to leverage the full potential of all‐perovskite tandem solar cells. Here, metal oxide nanocrystal layers anchored with carbazolyl hole‐selective‐molecules (CHs), which exhibit much lower optical loss, is employed to replace poly(3,4‐ethylenedioxythiophene) polystyrenesulfonate (PEDOT: PSS) as the hole transporting layers (HTLs) in lead‐tin (Pb‐Sn) perovskite sub‐cells and ICLs in all‐perovskite tandem solar cells. Optically transparent indium tin oxide nanocrystals (ITO NCs) layers are employed to enhance anchoring of CHs, while a mixture of two CHs is adopted to tune the surface energy‐levels of ITO NCs. The optimized mixed Pb‐Sn NBG perovskite solar cells demonstrate a high PCE of 23.2%, with a high short‐circuit current density (Jsc) of 33.5 mA cm‐2. A high PCE of 28.1% is further obtained in all‐perovskite tandem solar cells, with the highest Jsc of 16.7 mA cm‐2 to date. Encapsulated tandem solar cells maintain 90% of their reference point after 500 h of operation at the maximum power point (MPP) under 1‐Sun illumination.

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Efficient and scalable perovskite solar cells achieved by buried interface engineering

Abstract: High quality buried interface is crucial for highly efficient, stable, and scalable perovskite solar cells, especially for p-i-n structure devices. Here, we report a buried interface engineering by doping tetrachloroaluminate...

Cited by 13 publications

References 43 publications

Ion–Dipole Interaction Enabling Highly Efficient CsPbI₃ Perovskite Indoor Photovoltaics

Ion–Dipole Interaction Enabling Highly Efficient CsPbI₃ Perovskite Indoor Photovoltaics

Buried Interface Modification via Guanidine Thiocyanate for High-Performance Lead-Free Perovskite Solar Cells

Efficient All‐Perovskite Tandem Solar Cells with Low‐Optical‐Loss Carbazolyl Interconnecting Layers

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Efficient and scalable perovskite solar cells achieved by buried interface engineering

Abstract: High quality buried interface is crucial for highly efficient, stable, and scalable perovskite solar cells, especially for p-i-n structure devices. Here, we report a buried interface engineering by doping tetrachloroaluminate...

Cited by 13 publications

References 43 publications

Ion–Dipole Interaction Enabling Highly Efficient CsPbI3 Perovskite Indoor Photovoltaics

Ion–Dipole Interaction Enabling Highly Efficient CsPbI3 Perovskite Indoor Photovoltaics

Buried Interface Modification via Guanidine Thiocyanate for High-Performance Lead-Free Perovskite Solar Cells

Efficient All‐Perovskite Tandem Solar Cells with Low‐Optical‐Loss Carbazolyl Interconnecting Layers

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Ion–Dipole Interaction Enabling Highly Efficient CsPbI₃ Perovskite Indoor Photovoltaics

Ion–Dipole Interaction Enabling Highly Efficient CsPbI₃ Perovskite Indoor Photovoltaics