2020
DOI: 10.1039/d0tc01435d
|View full text |Cite
|
Sign up to set email alerts
|

Efficient and readily tuneable near-infrared photodetection up to 1500 nm enabled by thiadiazoloquinoxaline-based push–pull type conjugated polymers

Abstract:

Organic photodetectors made from thiadiazoloquinoxaline-based copolymers reach high detectivities in the near-infrared range up to 1400 nm.

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
3
1

Citation Types

1
55
0

Year Published

2020
2020
2024
2024

Publication Types

Select...
7

Relationship

3
4

Authors

Journals

citations
Cited by 48 publications
(56 citation statements)
references
References 45 publications
1
55
0
Order By: Relevance
“…The synthesis and performance in NIR photodiodes of three of the used polymers—PTTBAI, PBTQ(OD), and PTTQ(HD)—have been reported before. [ 16,39 ] The synthesis route for the novel ultralow gap push–pull copolymer PTTQn(HD) is provided in the Supporting Information (Scheme S1, Supporting Information). The chemical structures and their frontier orbital energy levels, as estimated via cyclic voltammetry (CV, Figure S2, Supporting Information), are shown in Figure a–b, respectively.…”
Section: Figurementioning
confidence: 99%
“…The synthesis and performance in NIR photodiodes of three of the used polymers—PTTBAI, PBTQ(OD), and PTTQ(HD)—have been reported before. [ 16,39 ] The synthesis route for the novel ultralow gap push–pull copolymer PTTQn(HD) is provided in the Supporting Information (Scheme S1, Supporting Information). The chemical structures and their frontier orbital energy levels, as estimated via cyclic voltammetry (CV, Figure S2, Supporting Information), are shown in Figure a–b, respectively.…”
Section: Figurementioning
confidence: 99%
“…To date, photodetectors employing organic semiconductors with optical gaps spanning the visible (VIS) and near‐infrared (NIR) range from 400 up to 2500 nm have been reported. [ 7–9 ] High‐performance devices have been demonstrated in the VIS and significant research efforts now focus on OPDs with detection wavelengths beyond the silicon regime (> 1000 nm), which at this time requires costly inorganic materials which are not compatible with direct integration on CMOS readout circuits. [ 10–12 ] However, to be interesting for NIR applications, OPDs will need significant improvements in dark and noise currents as well as photon‐to‐electron conversion efficiencies.…”
Section: Introductionmentioning
confidence: 99%
“…More specifically, near-infrared photodetection (NIR-OPD, @800-3000 nm) 17 is valuable for numerous scientific as well as industrial (inspection, sorting, safety/security) and recreational applications. Nowadays, near-infrared photodetectors are commonly based on inorganic semiconductors such as InGaAs, InGaSb 18 or HgCdTe, 19 although organic-based NIR detectors 18,[20][21][22][23][24] have gained increasing interest. To date, a very limited amount of well performing NIR-OPDs have been reported.…”
Section: Introductionmentioning
confidence: 99%
“…To date, a very limited amount of well performing NIR-OPDs have been reported. 24 Recently, push-pull copolymers based on BAI indigo core were found to be suitable for photodetection beyond 1000 nm. 19 Here, we investigate the ground-and excited-state characteristics of copolymers comprising BAI1 units, linked through thiophene-based donor units (cyclopentadithiophene CPDT-or benzodithiophene BDT-based) to verify the potential of such copolymers as NIR solid state emitters.…”
Section: Introductionmentioning
confidence: 99%