Efficient 3D simulation of photonic crystal VCSELs

Kulkarni, Aditya; Krishnamurthy, Vivek; Povoloskyi, Michael; Klein, Benjamin

doi:10.1117/12.810037

Search citation statements

Order By: Relevance

Paper Sections

Select...

Device Fabrication and Measurement1

Citation Types

Supporting

Mentioning

Contrasting

Year Published

2024

Publication Types

Select...

Article1

Relationship

Self Cite0

Independent1

Authors

Journals

Cited by 1 publication

(1 citation statement)

References 15 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The simulation uses the carrier transport model based on a drift‐diffusion approach (see ref. [10] for further discussion) employing the non‐linear Newton method. The effective index method model was used for the VCSEL simulation environment.…”

Section: Device Fabrication and Measurementmentioning

confidence: 99%

Inverted n–p junction 940‐nm vertical‐cavity surface‐emitting laser arrays consisting of 875 devices on p‐GaAs substrate

Lee,

Pouladi,

Kim

et al. 2024

Electronics Letters

View full text Add to dashboard Cite

The authors demonstrate a large‐area vertical‐cavity surface‐emitting laser (VCSEL) 25 × 35 array on a p‐type GaAs substrate with an emission wavelength of ∼940 nm and optical output power > 1 W, using an inverted junction (n‐up) epitaxial structure for emerging sensing applications. The electrical characteristic (series resistance) of the inverted n–p VCSELs is better than that of standard p–n VCSELs, but optical characteristics (the threshold current density and slope efficiency) are worse possibly due to crystalline defects originating from the p‐type substrate whose effect could be avoided in small‐area VCSELs. Other inverted junction structures on an n‐type substrate are needed for further development.

show abstract

Section: Device Fabrication and Measurementmentioning

confidence: 99%