2017
DOI: 10.1103/physrevapplied.7.044016
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Efficiency Potential of Photovoltaic Materials and Devices Unveiled by Detailed-Balance Analysis

Abstract: A consistent mathematical approach is presented that connects the Shockley-Queisser (SQ) theory to the analysis of real-world devices. We demonstrate that the external photovoltaic quantum efficiency Q PV e of a solar cell results from a distribution of SQ-type band-gap energies and how this distribution is derived from experimental data. This leads us to the definition of a photovoltaic band-gap energy E PV g as a reference value for the analysis of the device performance. For a variety of solar-cell devices,… Show more

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Cited by 271 publications
(385 citation statements)
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“…4, the falling edge of the EQE can be attributed to Sb 2 S 3 absorption. The inflection point of the EQE [59] yields a band gap of 1.79 eV. Although fill factor (FF) and V oc do not vary as much between the processes as the J sc , it is noteworthy that despite a lower efficiency the highest V oc of 650 mV is obtained for the Sb-TU process with KP115 as HTM.…”
Section: Resultsmentioning
confidence: 99%
See 1 more Smart Citation
“…4, the falling edge of the EQE can be attributed to Sb 2 S 3 absorption. The inflection point of the EQE [59] yields a band gap of 1.79 eV. Although fill factor (FF) and V oc do not vary as much between the processes as the J sc , it is noteworthy that despite a lower efficiency the highest V oc of 650 mV is obtained for the Sb-TU process with KP115 as HTM.…”
Section: Resultsmentioning
confidence: 99%
“…The inflection point IP of the falling edge of EQE data served as value for the band gap [59]. The EQE IP obtained from measurements within this work was taken for all Sb 2 S 3 data points.…”
Section: Methodsmentioning
confidence: 99%
“…However, this does not imply that these properties (absorption coefficient and refractive index) are the most decisive ones. In view of the fact that most practical photovoltaic devices and even most record devices are limited by non-radiative recombination [80,81], urges us to get access to this loss mechanism by first principle calculations. For instance the tendency of some types of semiconductors to build shallow instead of deep intrinsic defects [82,83] is certainly an important hint towards prospective photovoltaic performance.…”
Section: Discussionmentioning
confidence: 99%
“…Together, PLQY and Δ μ F were analyzed using a well‐known relationshipΔμnormalF=VOC,rad+knormalBTqln(PLQY)where VOC,rad is the radiative open‐circuit voltage, k B is Boltzmann's constant, T is temperature, and q is elementary charge. The nonradiative recombination losses are kBTqlnfalse(PLQYfalse) = −162 mV.…”
mentioning
confidence: 99%