Efficiency of oxygen plasma cleaning of reactive ion damaged silicon surfaces

Oehrlein, G. S.; Scilla, G.; Jeng, S. J.

doi:10.1063/1.99269

Cited by 48 publications

(27 citation statements)

References 7 publications

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“…There have been many approaches explored to remove the plasma etch residues. These include the use of O 2 , NF 3 /Ar and He/H 2 plasma chemistries to clean polymeric residues 101,102,103,104,105 , as well as the use of wet etch chemistries such as aqueous dilute HF 106 and a variety of aqueous 107 , aqueous containing organic compounds 108 , and non-aqueous 109 formulation designs. It is most crucial for a wet etch clean step(s) to be robust with respect to polymer, residue and, metallic and non metallic particles removal, as well as exhibit high degree of compatibility to exposed substrate materials during the wet etch cleaning process.…”

Section: Problem Significancementioning

confidence: 99%

Fundamental Studies in Selective Wet Etching and Corrosion Processes for High-Performance Semiconductor Devices

Mistkawi¹

2000

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Section: Problem Significancementioning

confidence: 99%

Fundamental Studies in Selective Wet Etching and Corrosion Processes for High-Performance Semiconductor Devices

Mistkawi¹

2000

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“…However, the drawback with this method is the thickening of oxide layer on a silicon surface that occurs [6]. Another common method is oxygen plasma cleaning [7]. A comparison between UV-ozone and oxygen plasma cleaning processes was described by Choi et al [8].…”

Section: Introductionmentioning

confidence: 99%

Evaluation of Surface Cleaning Procedures for CTGS Substrates for SAW Technology with XPS

et al. 2017

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A highly efficient and reproducible cleaning procedure of piezoelectric substrates is essential in surface acoustic waves (SAW) technology to fabricate high-quality SAW devices, especially for new applications such SAW sensors wherein new materials for piezoelectric substrates and interdigital transducers are used. Therefore, the development and critical evaluation of cleaning procedures for each material system that is under consideration becomes crucial. Contaminants like particles or the presence of organic/inorganic material on the substrate can dramatically influence and alter the properties of the thin film substrate composite, such as wettability, film adhesion, film texture, and so on. In this article, focus is given to different cleaning processes like SC-1 and SC-2, UV-ozone treatment, as well as cleaning by first-contact polymer Opticlean, which are applied for removal of contaminants from the piezoelectric substrate Ca3TaGa3Si2O14. By means of X-ray photoelectron spectroscopy, the presence of the most critical contaminants such as carbon, sodium, and iron removed through different cleaning procedures were studied and significant differences were observed between the outcomes of these procedures. Based on these results, a two-step cleaning process, combining SC-1 at a reduced temperature at 30 ∘C instead of 80 ∘C and a subsequent UV-ozone cleaning directly prior to deposition of the metallization, is suggested to achieve the lowest residual contamination level.

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“…These include the use of O 2 , NF 3 /Ar and He/H 2 plasma chemistries to clean polymeric residues [1][2][3][4][5] , as well as the use of wet chemistries such as dilute HF(dHF) [6] . These plasma and dHF approaches have their limitations; plasma dry cleaning can only remove polymer residues, while dHF wet chemistry can only remove light polymers and small amounts of Cu x O y residues.…”

Section: Introductionmentioning

confidence: 99%

Metal Hardmask Etch Residue Removal For Advanced Copper / Low-k Devices

Cui

Kirk

Maloney

2007

2007 IEEE/SEMI Advanced Semiconductor Manufacturing Conference (ASMC)

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Plasma dry etching processes are commonly used to fabricate vertical sidewall trenches and vias for copper (Cu) / lowk dual damascene devices. Small amounts of polymer are intentionally left on the sidewalls of trenches and vias during the dry etching process in order to achieve a vertical profile and to protect the low-k materials under the etching mask. Other particulate etch residues (such as mixtures of copper oxide (Cu x O y ) with polymers) can be seen in the bottom of the vias. As technology nodes advance to 45nm and beyond, IC companies are investigating the use of a metal hardmask such as TiN in order to gain better etching selectivity to the low-k materials during the dry etching process. In order to obtain reliable, low-resistance interconnects that can be used to manufacture advanced IC devices, the polymers on the sidewalls and the particulate residues at the via bottoms must be removed prior to the next process step. In this paper we report a recently developed wet cleaning approach to remove the metal hardmask etch residues while maintaining high selectivity to the copper and low-k film(s). This was demonstrated at the 45nm technology node for porous low-k, as well as 65nm for non-porous low-k materials through controlled modification of the formulations. The cleaning mechanism of the etch residues is discussed.

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Efficiency of oxygen plasma cleaning of reactive ion damaged silicon surfaces

Cited by 48 publications

References 7 publications

Fundamental Studies in Selective Wet Etching and Corrosion Processes for High-Performance Semiconductor Devices

Fundamental Studies in Selective Wet Etching and Corrosion Processes for High-Performance Semiconductor Devices

Evaluation of Surface Cleaning Procedures for CTGS Substrates for SAW Technology with XPS

Metal Hardmask Etch Residue Removal For Advanced Copper / Low-k Devices

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