Efficiency limits for single-junction and tandem solar cells

Meillaud, Fanny; Shah, A.; Droz, C.; Vallat-Sauvain, E.; Miazza, C.

doi:10.1016/j.solmat.2006.06.002

Cited by 336 publications

(238 citation statements)

References 10 publications

(7 reference statements)

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“…[6][7][8][9][10] The top sub-cell in a silicon-based tandem should have a band gap between 1.6 and 1.9 eV. 11 However, very few materials exhibit high open-circuit voltages (V OC ) within this band gap range. Recently, the methylammonium-lead-halide perovskite has demonstrated a rapid efficiency increase [12][13][14][15][16] with a V OC of 1.15 V. 17 The methylammonium-lead-halide perovskite has a tunable band gap, ranging from 1.6 to 2.3 eV depending on halide composition, 18 though not all compositions are currently stable under illumination.…”

mentioning

confidence: 99%

A 2-terminal perovskite/silicon multijunction solar cell enabled by a silicon tunnel junction

Mailoa

Bailie

Johlin

et al. 2015

Applied Physics Letters

531

447

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With the advent of efficient high-bandgap metal-halide perovskite photovoltaics, an opportunity exists to make perovskite/silicon tandem solar cells. We fabricate a monolithic tandem by developing a silicon-based interband tunnel junction that facilitates majority-carrier charge recombination between the perovskite and silicon sub-cells. We demonstrate a 1 cm2 2-terminal monolithic perovskite/silicon multijunction solar cell with a VOC as high as 1.65 V. We achieve a stable 13.7% power conversion efficiency with the perovskite as the current-limiting sub-cell, and identify key challenges for this device architecture to reach efficiencies over 25%.

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mentioning

confidence: 99%

A 2-terminal perovskite/silicon multijunction solar cell enabled by a silicon tunnel junction

Mailoa

Bailie

Johlin

et al. 2015

Applied Physics Letters

531

447

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show abstract

“…We have also used a graded heterojunctions in both sides of intrinsic layer in order to ensure the band continuity at interfaces. For Si-based bottom cell, the top cell bandgap should be between 1.7 and 1.8 eV in order to achieve the current matching [1]. For this reason, we have varied the indium composition from 45% to 55%.…”

Section: Resultsmentioning

confidence: 99%

“…However, it is hard to find a matched-bandgap material with silicon (1.7-1.8 eV) [1]. The maximum power conversion efficiency (PCE) for a tandem solar cell is 31.6% for GaInP/GaAs tandem cell [2].…”

Section: Introductionmentioning

confidence: 99%

Modeling of InGaN/Si tandem cells: comparison between 2-contacts/4-contacts

et al. 2017

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Due to its electrical and optical interesting properties, InGaN alloy is being intensively studied to be combined with silicon in order to achieve low-cost high-efficiency solar cell. However, a relatively thick monophasic layer of InGaN is difficult to grow due to the relaxation issue in material. This issue can be avoided by semibulk structure. In this work, we present an InGaN/Si double-junction solar cell modeled using Silvaco-ATLAS TCAD software. We have taken into account polarization effect in III-N materials. We have shown that 50% of indium is needed to ensure the current matching between the top cell and the bottom cell in 2-terminal configuration. Such high indium composition is technologically challenging to grow. Thus, we have modeled a 4-terminals solar cell with relatively low indium composition (In = 25%) where current matching is not needed. With technologically feasible structural parameters, we have shown that an efficiency near to 30% can be achieved with InGaN/Si 4-contact tandem cell.

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“…The approach is to fabricate p-n, p-i-n or any other diode structure with different band gap semiconductors and connect them to enhance the photovoltaic conversion. The fundamental limit of the performance of tandem structures has been studied by Meillaud et al (Meillaud et al, 2006). The radiative efficiency limit for a single junction silicon cell is 30%.…”

Section: Multilayer Tandem Solar Cellsmentioning

confidence: 99%