Efficiency enhancement of Sb2Se3 thin-film solar cells by the co-evaporation of Se and Sb2Se3

Li, Zhiqiang; Zhu, Hongbing; Guo, Yuting; Niu, Xiaofei; Chen, Xu; Zhang, Chong; Zhang, Wen; Liang, Xiaoyang; Zhou, Dong; Chen, Jingwei; Mai, Yaohua

doi:10.7567/apex.9.052302

Cited by 75 publications

(33 citation statements)

References 23 publications

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“…These diffraction peaks indicated crystallization with orthorhombic structure according to the X-ray international card (number 15-0861) [25]. This result is in agreement with that recorded previously by other authors [10,18,26]. Since EDX results proved the presence of Mn dopant with 1.95 at %, Sb has a deficiency in its atomic percent from Sb 2 Se 3 compound.…”

Section: Resultssupporting

confidence: 89%

Influence of Film Thickness and Heat Treatment on the Physical Properties of Mn Doped Sb₂Se₃ Nanocrystalline Thin Films

Zawawi

Mahdy

El‐Sayad

2017

Journal of Nanomaterials

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Nanocrystalline thin films of Sb37.07Mn1.95Se60.98 with different thickness (7, 20, 40, and 80 nm) were successfully prepared via inert gas condensation technique. As-deposited films showed amorphous structure by grazing incident in-plane X-ray diffraction (GIIXD) technique. All films of different thicknesses were heat treated at 433 K for 90 min. The GIIXD pattern of annealed films showed nanocrystalline orthorhombic structure. The effect of thickness of annealed films on the structure and optical properties was studied. Calculated particle sizes are 20.67 and 24.15 for 40 and 80 nm thickness of heat treated film. High resolution transmission electron microscope HRTEM images and their diffraction patterns proved that 40 nm film thickness annealed at different temperature has nanocrystalline nature with observed (high) crystallinity that increases with annealing temperature. Blue shift of optical energy gap was observed from 1.68 to 2 eV with decreasing film thickness from 80 to 7 nm. Film thickness of 40 nm was exposed to different heat treated temperatures from 353 to 473 K to detect its effect on structure and optical and electrical properties. Blue shift from 1.73 to 1.9 eV was observed in its optical band gap due to direct transition as heat treatment temperature decreasing from 473 to 353 K. Electrical conductivity was studied for different heat treated films of thickness 40 nm, and intrinsic conduction mechanism is dominant. The activation energy Ea was affected by heat treatment process.

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Section: Resultssupporting

confidence: 89%

Influence of Film Thickness and Heat Treatment on the Physical Properties of Mn Doped Sb₂Se₃ Nanocrystalline Thin Films

Zawawi

Mahdy

El‐Sayad

2017

Journal of Nanomaterials

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“…Compared with the S‐3 solar cells, the apparently optimized values were obtained in the S‐5 solar cells, with improved J sc of 11.93 mA cm −2 , improved V oc of 0.637 V, reduced R s of 15 Ωcm 2 , improved R sh of 373 Ωcm 2 , and improved FF of 0.49 (Figure S6, Supporting Information shows that the best S‐5 device reached a PCE of 3.75%). One potential explanation might be the difference of sulfur deficits . As discussed in the EDX analysis, the Sb 2 S 5 precursor lead to the relatively sulfur‐rich Sb 2 S 3 films, which helped to overcome the sulfur deficit of the S‐3 film evaporated from Sb 2 S 3 precursor.…”

Section: Photovoltaic Parameters Of Best Sb2s3 Solar Cells (The Best mentioning

confidence: 95%

Microstructural and Optical Properties of Sb₂S₃ Film Thermally Evaporated from Antimony Pentasulfide and Efficient Planar Solar Cells

Chen

Liang

Lan

et al. 2018

Physica Rapid Research Ltrs

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Antimony sulfide (Sb2S3) thin film is a promising light absorber for solar cell application due to its suitable bandgap, high absorption coefficient, and non‐toxic constituents. However, thermally evaporated Sb2S3 thin films experience sulfur loss during evaporation and post‐annealing, which do harm to the film quality and the performance of the devices. In this work, for the first time Sb2S3 thin films are prepared by thermally evaporating antimony pentasulfide (Sb2S5) precursor. The thermal and microstructural properties of Sb2S3 and Sb2S5 precursors are studied and compared. The crystallization of the Sb2S3 film (S‐5) prepared from Sb2S5 precursor is inferior to that (S‐3) from Sb2S3 powder. And the annealed S‐5 film shows a larger bandgap of 1.69 eV than S‐3. However, compared with S‐3, planar S‐5 thin film solar cells in the configuration of glass/(SnO2:F) FTO/TiO2/Sb2S3/Spiro‐OMeTAD/Ag exhibit an apparently improved photovoltaic performance, with the best power conversion efficiency of 3.75% and high fill factor of 0.56, which is the highest efficiency of thermally evaporated planar Sb2S3 solar cell. The capacitance–voltage (C–V) measurement indicates that this might come from the higher C–V derived space‐charge density in S‐5. This work offers a new method to prepare Sb2S3 thin films for efficient solar cells.

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“…Leng et al used a post‐selenization process to compensate the selenium vacancy defects in thermal‐evaporated Sb 2 Se 3 absorbers and reduced the recombination loss in the solar cells . Liu et al, as well as our group, reported an in situ selenium (Se) compensation approach . Sb 2 Se 3 films grown in a Se‐rich environment exhibited longer carrier lifetime and demonstrated lower interfacial and bulk defects.…”

Section: Device Performance Parameters Of the Pure Sb2se3 And (Sb2se3mentioning

confidence: 99%

1D/3D Alloying Induced Phase Transition in Light Absorbers for Highly Efficient Sb₂Se₃ Solar Cells

et al. 2020

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A simple binary inorganic antimony selenide (Sb2Se3) compound is attractive as a promising light absorber for low‐cost and high‐efficiency photovoltaics. The external quantum efficiencies of Sb2Se3 solar cells are now approaching the optical limit values, which are comparable with the traditional well‐developed solar cells (such as Si, CuInGaSe2, CdTe, etc). However, the power conversion efficiency of the Sb2Se3 devices is constrained by the open‐circuit voltage (VOC) deficit, due to the intrinsic high resistivity and low element‐doping efficiency in such one‐dimensional (1D) crystals. Herein, a highly conductive, three‐dimensional (3D) crystal‐structure AgSbSe2 phase, formed by phase transition from low symmetry binary Sb2Se3, is introduced to control the doping density in the alloyed (Sb2Se3)x(AgSbSe2)1−x films utilizing configurational entropy. Guided by this alloying concept, 1D–3D (Sb2Se3)x(AgSbSe2)1−x alloy films with tunable doping densities are obtained. As a consequence, a noticeable improvement in VOC by >18% is observed in solar cells based on the (Sb2Se3)x(AgSbSe2)1−x alloy absorber layer, compared with the reference cell with a pure Sb2Se3 absorber, leading to a high conversion efficiency of 7.8%. This alloying model provides a universal approach to control the photoelectrical properties for high‐efficiency Sb2Se3‐based solar cells.

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Efficiency enhancement of Sb₂Se₃ thin-film solar cells by the co-evaporation of Se and Sb₂Se₃

Cited by 75 publications

References 23 publications

Influence of Film Thickness and Heat Treatment on the Physical Properties of Mn Doped Sb₂Se₃ Nanocrystalline Thin Films

Influence of Film Thickness and Heat Treatment on the Physical Properties of Mn Doped Sb₂Se₃ Nanocrystalline Thin Films

Microstructural and Optical Properties of Sb₂S₃ Film Thermally Evaporated from Antimony Pentasulfide and Efficient Planar Solar Cells

1D/3D Alloying Induced Phase Transition in Light Absorbers for Highly Efficient Sb₂Se₃ Solar Cells

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Efficiency enhancement of Sb2Se3 thin-film solar cells by the co-evaporation of Se and Sb2Se3

Cited by 75 publications

References 23 publications

Influence of Film Thickness and Heat Treatment on the Physical Properties of Mn Doped Sb2Se3 Nanocrystalline Thin Films

Influence of Film Thickness and Heat Treatment on the Physical Properties of Mn Doped Sb2Se3 Nanocrystalline Thin Films

Microstructural and Optical Properties of Sb2S3 Film Thermally Evaporated from Antimony Pentasulfide and Efficient Planar Solar Cells

1D/3D Alloying Induced Phase Transition in Light Absorbers for Highly Efficient Sb2Se3 Solar Cells

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Resources

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Efficiency enhancement of Sb₂Se₃ thin-film solar cells by the co-evaporation of Se and Sb₂Se₃

Influence of Film Thickness and Heat Treatment on the Physical Properties of Mn Doped Sb₂Se₃ Nanocrystalline Thin Films

Influence of Film Thickness and Heat Treatment on the Physical Properties of Mn Doped Sb₂Se₃ Nanocrystalline Thin Films

Microstructural and Optical Properties of Sb₂S₃ Film Thermally Evaporated from Antimony Pentasulfide and Efficient Planar Solar Cells

1D/3D Alloying Induced Phase Transition in Light Absorbers for Highly Efficient Sb₂Se₃ Solar Cells