Efficiency enhancement of doherty amplifier with combination of class-F and inverse class-F schemes for S-band base station application

Goto, S.; Kunii, T.; Inoue, Akihisa; Izawa, Kaoru; Ishikawa, T.; Matsuda, Yoshihisa

doi:10.1109/mwsym.2004.1339098

Cited by 24 publications

(5 citation statements)

References 12 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Similar to class E, class F and inverse class F amplifiers can be combined with Doherty technique to obtain high average efficiency for wireless communication signals with high peak to average power ratio. By using class F or inverse class F in a Doherty transmitter, peak efficiency is increased compared to the variation with class B main amplifier (Goto et al, 2004).…”

Section: Class Fmentioning

confidence: 99%

Gallium Nitride-Based Power Amplifiers for Future Wireless Communication Infrastructure

Chalermwisutkul¹

2012

Wireless Communications and Networks - Recent Advances

View full text Add to dashboard Cite

IntroductionProgress in wireless communication technology has enabled applications which were unthinkable as the first digital mobile phone came into the market. Integration of digital camera into a mobile phone was an important step of the convergence between telecommunication and information technology as users started to require transfer of digital pictures besides conventional voice and text information. In addition, fast progress in digital technology has been an immense driving force of the needs for high data rates in telecommunications. Digital multimedia contents e.g. pictures, music, video clips are expected to be available anytime and anywhere which results into tremendous requirements in research and development in wireless technology.Even though the industry tends to be majorly driven by software applications as well as "look and feel" of mobile devices, enabling hardware technologies in the background also deserve appropriate attention from R&D engineers. As soon as the performance of mobile communication systems cannot fulfil the expectation of users in terms of data rate and error robustness, the importance of the enabling hardware technology becomes obvious.In order to cope with the rapid growth of the needs in wireless data transmission with constantly increasing data rates, new technical challenges arise perpetually on every layers of the OSI reference model. Whereas new modulation and multiple access techniques e.g. OFDM and OFDMA are introduced to support higher data rates and intelligent network configuration deals with the optimization of routing to increase the capacity and to improve load distribution, progress in hardware components in mobile devices and mobile base stations on the physical layer is also required to serve the needs of the higher OSI layers. Such progress on the physical layer includes techniques and hardware architectures which can enhance power efficiency of the system components while still complying with other specifications regarding linearity, noise, interference, etc.. Also, novel semiconductor device technology provides improved power handling capability resulting in smaller hardware size and high impedance which simplifies the design of matching networks. Moreover, large bandwidth and high impedance offer the possibility to create multiband components by designing the matching networks to be reconfigurable (Fischer, 2004).This chapter aims to review state-of-the-art research in power amplifiers for wireless communication infrastructure featuring advantages of Gallium Nitride (GaN)-based power www.intechopen.com Wireless Communications and Networks -Recent Advances 158devices including large bandwidth capability, high power density and high output impedance. Regarding the issues of power amplifier design, state-of-the-art power amplifier architectures will be discussed with various prospects. For wireless communication standards with high data rates e.g. WCDMA, WiMAX and LTE, their modulation schemes and multiple access techniques lead to non-constant signal enve...

show abstract

Section: Class Fmentioning

confidence: 99%

Gallium Nitride-Based Power Amplifiers for Future Wireless Communication Infrastructure

Chalermwisutkul¹

2012

Wireless Communications and Networks - Recent Advances

View full text Add to dashboard Cite

show abstract

“…Therefore, a two-way typical DPA structure is still an attractive option due to its simplicity. For a two-way DPA, further improvements in efficiency have been achieved using highly efficient harmonic controlled PA cells [9][10][11][12][13]. For example, Class-F and inverse Class-F (Class-F −1 ) PAs have been widely used as single cells of a DPA.…”

Section: Introductionmentioning

confidence: 99%

Analysis and design optimisation for inverse Class‐F GaN Doherty amplifier

Kim

2019

IET Microwaves, Antennas & Propagation

View full text Add to dashboard Cite

An analytical model of an inverse Class‐F (Class‐F‐1) Doherty power amplifier (DPA) with a proposed compensation method is presented. The derived model was shown to be effective in predicting the behaviour of the fundamental current and optimum load impedance in both a carrier and peaking cell for a Class F‐1 DPA. Based on the analysis results, the degradation of the RF performance, including the peak output power, efficiency, and linearity, caused by an inherent lower current driving of a peaking cell is also proven. To compensate this issue, a dynamic gate bias for a peaking cell using a proposed voltage shaping is introduced. For verification, a 2.4 GHz GaN Class‐F‐1 DPA was designed and fabricated. Using the proposed gate shaping method, improvements of the maximum output power of 2.6 dB and peak power drain efficiency of 5.6% are achieved compared with a conventional case. With a 10 MHz 6.5 dB peak‐to‐average power ratio signal, the Class‐F‐1 DPA achieves an average output power of 36 dBm with a DE of 54% at a 28 V supply voltage. The measured adjacent channel rejection ration under such conditions is below −30 dBc.

show abstract

“…Usually, the Doherty amplifier couples a class‐B main amplifier and a class‐C peaking amplifier [1]. The class‐F amplifier is renown for high efficiency [2], so recently, researchers have demonstrated Doherty amplifiers coupling a pair of class‐F amplifiers [3–6], coupling a class‐F amplifier and inverse class‐F amplifier [7], and coupling a class‐F amplifier and a class‐C amplifier [8]. In all cases, each constituent amplifier contains their own harmonic terminating networks and only the fundamental plays a role in the Doherty behavior.…”

Section: Introductionmentioning

confidence: 99%

A compact class‐F/class‐C Doherty amplifier

Eccleston

Smith

Gough

2011

Micro & Optical Tech Letters

View full text Add to dashboard Cite

A Doherty amplifier is described in which odd harmonics from the class‐C peaking amplifier flow to the main amplifier to achieve class‐F operation, without the need for complicated space consuming harmonic control circuits. The measured efficiency exceeded 50% above the 6 dB back‐off. The measured second and third harmonic levels were below −19 dBc. © 2011 Wiley Periodicals, Inc. Microwave Opt Technol Lett, 2011; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.26035

show abstract

Efficiency enhancement of doherty amplifier with combination of class-F and inverse class-F schemes for S-band base station application

Cited by 24 publications

References 12 publications

Gallium Nitride-Based Power Amplifiers for Future Wireless Communication Infrastructure

Gallium Nitride-Based Power Amplifiers for Future Wireless Communication Infrastructure

Analysis and design optimisation for inverse Class‐F GaN Doherty amplifier

A compact class‐F/class‐C Doherty amplifier

Contact Info

Product

Resources

About