Efficiency Enhancement by  BSF  Optimization on Cu (In1−x, Gax) Se2 Solar Cells with Tin (IV) Sulfide Buffer Layer

Benbouzid, Zineb; Benstâali, W; Rahal, Wassila Leïla; Hassini, Noureddine; Benzidane, Mohammed Ridha; Boukortt, A.

doi:10.1007/s11664-023-10416-8

Cited by 2 publications

(1 citation statement)

References 52 publications

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“…The output parameters of the supposed device structure of CuSbS 2 /CZTS/In 2 Se 3 /ITO and CuSbS 2 /CZTS/Ag 2 S/ITO CZTS‐based TFSCs have been analyzed by using two different buffer layers, which are In 2 Se 3 and Ag 2 S and CuSbS 2 as the BSF layer 27 . The effect of doping density, bandgap, affinity, carrier concentration, and thickness on the output performance has also been analyzed.…”

Section: Introductionmentioning

confidence: 99%

Impact on generation and recombination rate in Cu₂ZnSnS₄ (CZTS) solar cell for Ag₂S and In₂Se₃ buffer layers with CuSbS₂ back surface field layer

Chauhan,

Agarwal,

Srivastava

et al. 2023

Progress in Photovoltaics

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For photovoltaic (PV) applications, the earth‐abundant and non‐hazardous Kesterite Cu2ZnSnS4 (CZTS) is a possible substitute for chalcopyrite copper indium gallium selenide (CIGS). This research offers insight into the most innovative method for improving the performance of Kesterite solar cells (SCs) by using CuSbS2 back surface field (BSF) and Ag2S and In2Se3 as buffer layers, focuses on aligning energy bands, reducing non‐radiative recombination, and improving open‐circuit voltage (Voc). The proposed cells are Ni/CuSbS2/CZTS/In2Se3/ITO/Al and Ni/CuSbS2/CZTS/Ag2S/ITO/Al by adding interfaces. The optimized CZTS SCs with In2Se3 achieve a short‐circuit current density (Jsc) of 30.274 mA/cm2, fill factor (FF) of 89.15%, power conversion efficiency (PCE) of 31.67%, and Voc of 1.173 V. With the Ag2S buffer layer, PCE is 31.02%, FF is 88.61%, Jsc is 30.245 mA/cm2, and Voc is 1.157 V. These results depict the potential of CZTS‐based SCs with improved performance compared with conventional structures.

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Section: Introductionmentioning

confidence: 99%

Impact on generation and recombination rate in Cu₂ZnSnS₄ (CZTS) solar cell for Ag₂S and In₂Se₃ buffer layers with CuSbS₂ back surface field layer

Chauhan,

Agarwal,

Srivastava

et al. 2023

Progress in Photovoltaics

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Performance Improvement of CIGS Solar Cell: A Simulation Approach by SCAPS-1D

Wahid,

Howlader,

Ahasan

et al. 2023

EPE

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Thin-film solar cells possess the distinct advantage of being cost-effective and relatively simple to manufacture. Nevertheless, it is of utmost importance to enhance their overall performance. In this research work, copper indium gallium selenide (CIGS)-based ultra-thin solar cell (SC) configuration (Ag/ZnO/ZnSe/CIGS/Si/Ni) has been designed and examined using SCAPS-1D. The numerical calculations revealed that this new design resulted in a substantial improvement in SC performance. This study explores the utilization of two absorber layers, CIGS and Si, both with a total of 2 μm thickness, to enhance device performance while reducing material costs, observing an increase in key SC parameters as the Si absorber layer thickness is increased, reaching a maximum efficiency of 29.13% when CIGS and Si thicknesses are set at 0.4 μm and 1.6 μm, respectively with doping absorber doping density of 10 14 cm −3 . Furthermore, we analyze the impact of variation in absorber and buffer layer thickness, as well as doping concentration, surface recombination velocity (SRV), electron affinity, series-shunt resistance, and temperature, on optimized CIGS SC parameters such as short-circuit current density (J SC ), open circuit voltage (V OC ), fill factor (FF), and power conversion efficiency (PCE). The findings yielded by the investigation offer significant elucidation regarding the fabrication of economically viable and highly efficient non-hazardous CIGS ultra-thin SC.

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Efficiency Enhancement by BSF Optimization on Cu (In1−x, Gax) Se2 Solar Cells with Tin (IV) Sulfide Buffer Layer

Cited by 2 publications

References 52 publications

Impact on generation and recombination rate in Cu₂ZnSnS₄ (CZTS) solar cell for Ag₂S and In₂Se₃ buffer layers with CuSbS₂ back surface field layer

Impact on generation and recombination rate in Cu₂ZnSnS₄ (CZTS) solar cell for Ag₂S and In₂Se₃ buffer layers with CuSbS₂ back surface field layer

Performance Improvement of CIGS Solar Cell: A Simulation Approach by SCAPS-1D

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Efficiency Enhancement by BSF Optimization on Cu (In1−x, Gax) Se2 Solar Cells with Tin (IV) Sulfide Buffer Layer

Cited by 2 publications

References 52 publications

Impact on generation and recombination rate in Cu2ZnSnS4 (CZTS) solar cell for Ag2S and In2Se3 buffer layers with CuSbS2 back surface field layer

Impact on generation and recombination rate in Cu2ZnSnS4 (CZTS) solar cell for Ag2S and In2Se3 buffer layers with CuSbS2 back surface field layer

Performance Improvement of CIGS Solar Cell: A Simulation Approach by SCAPS-1D

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Resources

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Impact on generation and recombination rate in Cu₂ZnSnS₄ (CZTS) solar cell for Ag₂S and In₂Se₃ buffer layers with CuSbS₂ back surface field layer

Impact on generation and recombination rate in Cu₂ZnSnS₄ (CZTS) solar cell for Ag₂S and In₂Se₃ buffer layers with CuSbS₂ back surface field layer