Efficiency droop in nitride LEDs revisited: impact of excitonic recombination processes

Hangleiter, A.; Langer, Torsten; Gerhard, Marina; Kalincev, Dimitry; Kruse, Andreas; Bremers, Heiko; Rossów, U.; Koch, Martin

doi:10.1117/12.2078803

Cited by 3 publications

(4 citation statements)

References 18 publications

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“…Effective decay time, radiative lifetime, and non-radiative lifetime of a highly efficient (>80% at 300 K) GaInN/GaN MQW versus temperature. As the effective lifetime exhibits an identical temperature dependence as the radiative lifetime, the absolute value of the radiative lifetime at low temperature is identical to the measured effective lifetime [69].…”

Section: Non-and Semipolar Quantum Wellssupporting

confidence: 64%

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Recombination dynamics in GaInN/GaN quantum wells

Hangleiter¹

2019

Semicond. Sci. Technol.

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GaInN/GaN quantum wells are now at the heart of visible light emitting devices such as light emitting diodes and laser diodes. Radiative recombination of charge carriers provides the basis of light emission, while non-radiative recombination processes constitute unwanted loss mechanisms. In this review, the physics of both radiative and non-radiative recombination processes is discussed in detail, shining light on many peculiar properties of III-nitride quantum wells.

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Section: Non-and Semipolar Quantum Wellssupporting

confidence: 64%

“…This kind of analysis has been applied to the data of Langer et al [24] with the results shown in figure 20 [69]. The analysis shows that both radiative and Auger recombination are enhanced by approximately two and three orders of magnitude, respectively, at low carrier densities.…”

Section: Unified Picturementioning

confidence: 99%

Recombination dynamics in GaInN/GaN quantum wells

Hangleiter¹

2019

Semicond. Sci. Technol.

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“…Based on the existing information, 8 we are also unable to evaluate the influence of other effects such as current crowding, 10 electron leakage, 3 non-uniform Indium distribution, 39 or excitonic enhancement. 40 Further research is needed to fully understand the contribution of Auger recombination to the GaN-LED efficiency droop.…”

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confidence: 99%

On the uncertainty of the Auger recombination coefficient extracted from InGaN/GaN light-emitting diode efficiency droop measurements

Piprek

Römer

Witzigmann

2015

Applied Physics Letters

103

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III-nitride light-emitting diodes (LEDs) suffer from a severe efficiency reduction with increasing injection current (droop). Auger recombination is often seen as primary cause of this droop phenomenon. The corresponding Auger recombination coefficient C is typically obtained from efficiency measurements using mathematical models. However, C coefficients reported for InGaN active layers vary over two orders of magnitude. We here investigate this uncertainty and apply successively more accurate models to the same efficiency measurement, thereby revealing the strong sensitivity of the Auger coefficient to quantum well properties such as electron-hole ratio, electric field, and hot carrier escape. V

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“…Likewise, the B coefficient cannot be treated as a constant since, at high density, when the system gets degenerate, phase-space filling drastically reduces B [20]. Moreover, considering the large binding energy of excitons in thin InGaN/GaN QWs (both polar and nonpolar ones), exciton recombination is expected to play an important role even at room temperature [21,22].…”

Section: Introductionmentioning

confidence: 99%

Carrier-density-dependent recombination dynamics of excitons and electron-hole plasma in m -plane InGaN/GaN quantum wells

et al. 2016

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We study the carrier-density-dependent recombination dynamics in m-plane InGaN/GaN multiple quantum wells in the presence of n-type background doping by time-resolved photoluminescence. Based on Fermi's golden rule and Saha's equation, we decompose the radiative recombination channel into an excitonic and an electron-hole pair contribution, and extract the injected carrier-density-dependent bimolecular recombination coefficients. Contrary to the standard electron-hole picture, our results confirm the strong influence of excitons even at room temperature. Indeed, at 300 K, excitons represent up to 63 ± 6% of the photoexcited carriers. In addition, following the Shockley-Read-Hall model, we extract the electron and hole capture rates by deep levels and demonstrate that the increase in the effective lifetime with injected carrier density is due to asymmetric capture rates in presence of an n-type background doping. Thanks to the proper determination of the density-dependent recombination coefficients up to high injection densities, our method provides a way to evaluate the importance of Auger recombination.

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Efficiency droop in nitride LEDs revisited: impact of excitonic recombination processes

Cited by 3 publications

References 18 publications

Recombination dynamics in GaInN/GaN quantum wells

Recombination dynamics in GaInN/GaN quantum wells

On the uncertainty of the Auger recombination coefficient extracted from InGaN/GaN light-emitting diode efficiency droop measurements

Carrier-density-dependent recombination dynamics of excitons and electron-hole plasma in m -plane InGaN/GaN quantum wells

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