Efficiency Comparison of Voltage-Source and Current-Source Drive Systems for Medium-Voltage Applications

Suh, Yongsug; Steinke, J.K.; Steimer, P.K.

doi:10.1109/tie.2007.900352

Cited by 94 publications

(39 citation statements)

References 7 publications

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“…MV IGCT press-pack devices are mainly used in high power industrial applications owing to their advantageous features such as press-pack housing cases, a higher thermal/power cycling capability, and explosion-free failure mode [5]. Recently, a 10kV IGCT device has been introduced and its switching capability has been confirmed [10].…”

Section: A Press-pack Type Igct For MV Convertersmentioning

confidence: 99%

“…Although the switching loss can vary depending on the gate impedance, parasitic circuit elements, and snubber characteristics, this linear approximation gives fairly good accuracy particularly in the vicinity of the manufacturer's test point (V test and I test ) and snubber condition [5].…”

Section: ) Switching Lossesmentioning

confidence: 99%

“…In the case of module type IGBTs, the anti-parallel diode part integrated into the package of a 5SNA0750G650300 is also utilized as a neutral-point clamp diode. As for neutral-point clamp diodes of NPD 5 and NPD 6 , two anti-parallel diodes of 5SNA0750G650300 are paralleled (n p =2). Fig.…”

Section: Comparison Of Lossesmentioning

confidence: 99%

“…20 describes the total loss distribution at worst possible case under the inverter operating mode for the target power semiconductor switch of the IGCT type. Under the inverter operating mode, Q 1 , Q 4 , NPD 5 , and NPD 6 are subject to most of the power loss. As noted in Fig.…”

Section: Comparison Of Lossesmentioning

confidence: 99%

“…In addition, a power loss analysis gives an engineer insight into cost-effective system designs [5], [6]. This paper compares four different high power switching devices with respect to power loss dissipation.…”

Section: Introductionmentioning

confidence: 99%

See 4 more Smart Citations

Loss Analysis and Comparison of High Power Semiconductor Devices in 5MW PMSG MV Wind Turbine Systems

Lee¹,

Suh²,

Kang³

2015

Journal of Power Electronics

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This paper provides a loss analysis and comparison of high power semiconductor devices in 5MW Permanent Magnet Synchronous Generator (PMSG) Medium Voltage (MV) Wind Turbine Systems (WTSs). High power semiconductor devices of the press-pack type IGCT, module type IGBT, press-pack type IGBT, and press-pack type IEGT of both 4.5kV and 6.5kV are considered in this paper. Benchmarking is performed based on the back-to-back type 3-level Neutral Point Clamped Voltage Source Converters (3L-NPC VSCs) supplied from a grid voltage of 4160V. The feasible number of semiconductor devices in parallel is designed through a loss analysis considering both the conduction and switching losses under the operating conditions of 5MW PMSG wind turbines, particularly for application in offshore wind farms. This paper investigates the loss analysis and thermal performance of 5MW 3L-NPC wind power inverters under the operating conditions of various power factors. The loss analysis and thermal analysis are confirmed through PLECS Blockset simulations with Matlab Simulink. The comparison results show that the press-pack type IGCT has the highest efficiency including the snubber loss factor.

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Section: A Press-pack Type Igct For MV Convertersmentioning

confidence: 99%

Section: ) Switching Lossesmentioning

confidence: 99%