Efficiency calibration of a Ge(In) semiconductor detector by thin‐ and thick‐arget PIXE

Abstract

The efficiency of a Ge(In) semiconductor x-ray detector was measured in the energy region 1-25 keV using proton-induced x-rays from thick targets and from thin targets of standard thickness, and the results of the two calibration methods were compared. A proton energy of 2.00 MeV was used in an external beam facility. A model based on fundamental parameters (mass absorption coefficients, fluorescence yields and relative x-ray emission rates) was used to reproduce the experimental results.