Efficiency boost of CZTS solar cells based on double-absorber architecture: Device modeling and analysis

AlZoubi, Tariq; Moghrabi, Ahmad; Moustafa, Mohamed; Yasin, S.

doi:10.1016/j.solener.2021.07.012

Cited by 43 publications

(20 citation statements)

References 33 publications

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“…The open circuit voltage and short circuit current decreases almost linearly as a function of the temperature in the rage studied. The values of open circuit voltagereported in the literature[23] is higher with similar trend with the increase in temperature.…”

supporting

confidence: 66%

Junction Configuration Effects on the Photovoltaic Parameters of a-Si/CZTS Solar Cells

Bitam¹,

Hadjoudja²,

Zaidi³

et al. 2022

Preprint

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Due to increased energy intensive human activities resulting accelerated demand for electric power coupled with occurrence of natural disasters with increased frequency, intensity, and duration, it becomes essential to explore and advance renewable energy technology for sustainability of the society. Addressing the stated problem and providing a radical solution has been attempted in this study. To harvest the renewable energy, among variety of solar cells reported, a composite a-Si/CZTS photovoltaic devices has not yet been investigated. The calculated parameters for solar cell based on the new array of layers consisting of a-Si/CZTS are reported in this study. The variation of i) solar cell efficiency as a function of CZTS layer thickness, temperature, acceptor, and donor defect concentration; ii) variation of the open circuit current density as a function of temperature, open circuit voltage; iii) variation of open circuit voltage as a function of the thickness of the CZTS layer has been determined. There has been no reported study on a-Si/CZTS configuration-based solar cell, analysis of the parameters, and study to address the challenges imped efficiency of the photovoltaic device and the same has been discussed in this work. The value of the SnO2/a-Si/CZTS solar cells obtained from the simulation is 23.9 %.

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supporting

confidence: 66%

Junction Configuration Effects on the Photovoltaic Parameters of a-Si/CZTS Solar Cells

Bitam¹,

Hadjoudja²,

Zaidi³

et al. 2022

Preprint

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“…In this regard, the highest experimentally reported efficiency of CZTS solar cell is 11% 67 which was improved theoretically to 19.4% by direct integration of a thin Si layer with thickness as low as 2 µm between Mo backcontact and the primary CZTS active layer. 68 Our tandem cell without plasmonic back reflector achieves ~8.24% efficiency improvement (~21% vs. 19.4%) over the double-absorber hybrid model. This improvement can be attributed to tandem structure implementation, increasing Si absorber thicknesses to 9 µm and using an antireflection coating layer.…”

Section: Thickness Optimization Of the Tandem Cellmentioning

confidence: 90%

Surface plasmon enhanced ultrathin Cu₂ZnSnS₄/crystalline-Si tandem solar cells

2023

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“…Nonetheless, the main limitations along the journey of CdTe and CIGS absorbers are that the materials such as Cd and Te are toxic, environmentally hazardous, and scarce elements as well as the In and Ga in CIGS are rare and expensive 17–19 . In this context, a chalcogenide material CZTS has drawn scientists attention as a promising alternative absorber in the TFSC technology 20–23 . Earth abundant raw material and nontoxic nature of the CZTS enable it as a precise absorber candidate for the PV technology to replace other costly and toxic absorbers.…”

Section: Introductionmentioning

confidence: 99%

Performance evaluation of WS₂ as buffer and Sb₂S₃ as hole transport layer in CZTS solar cell by numerical simulation

Riyad

Sunny

Khatun

et al. 2022

Engineering Reports

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This study reports on performance enhancement of a Cu2ZnSnS4 solar cell introducing Sb2S3 as hole transport layer (HTL) along WS2 as buffer layer. We have investigated photovoltaic (PV) characteristics by utilizing SCAPS‐1D. A comparative analysis on PV performances between conventional CZTS/CdS and proposed Ni/Sb2S3/CZTS/WS2/FTO/Al solar cells is presented. It is revealed that “spike like” band structure at the CZTS/WS2 interface having smaller conduction band offset makes it potential alternative to commonly used CdS buffer. This report also evaluates that the Sb2S3 as an HTL inserted at the rear of CZTS enhances performances by reducing carrier recombination at back interface with appropriate band alignment. The impacts of thickness, carrier concentration of different layers, and bulk defect density in CZTS as well as the interface defects on cell outputs are analyzed. The influences of temperature, work function, and cell resistances are also examined. Optimum absorber thickness of 1.0 μm along doping density of 1017 cm−3 is selected. A maximum efficiency of 30.63% is achieved for the optimized CZTS cell. Therefore, these results suggest that Sb2S3 as HTL and WS2 as buffer layer can be employed effectively to develop highly efficient and low‐cost CZTS solar cells.

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Efficiency boost of CZTS solar cells based on double-absorber architecture: Device modeling and analysis

Cited by 43 publications

References 33 publications

Junction Configuration Effects on the Photovoltaic Parameters of a-Si/CZTS Solar Cells

Junction Configuration Effects on the Photovoltaic Parameters of a-Si/CZTS Solar Cells

Surface plasmon enhanced ultrathin Cu₂ZnSnS₄/crystalline-Si tandem solar cells

Performance evaluation of WS₂ as buffer and Sb₂S₃ as hole transport layer in CZTS solar cell by numerical simulation

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Efficiency boost of CZTS solar cells based on double-absorber architecture: Device modeling and analysis

Cited by 43 publications

References 33 publications

Junction Configuration Effects on the Photovoltaic Parameters of a-Si/CZTS Solar Cells

Junction Configuration Effects on the Photovoltaic Parameters of a-Si/CZTS Solar Cells

Surface plasmon enhanced ultrathin Cu2ZnSnS4/crystalline-Si tandem solar cells

Performance evaluation of WS2 as buffer and Sb2S3 as hole transport layer in CZTS solar cell by numerical simulation

Contact Info

Product

Resources

About

Surface plasmon enhanced ultrathin Cu₂ZnSnS₄/crystalline-Si tandem solar cells

Performance evaluation of WS₂ as buffer and Sb₂S₃ as hole transport layer in CZTS solar cell by numerical simulation