Efficiency and stability enhancement of laser-crystallized polycrystalline silicon thin-film solar cells by laser firing of the absorber contacts

Weizman, M.; Rhein, H.; Dore, Jonathon; Gall, S.; Klimm, C.; Andrä, G.; Schultz, Christof; Fink, F.; Rau, B.; Schlatmann, Rutger

doi:10.1016/j.solmat.2013.09.033

Cited by 24 publications

(19 citation statements)

References 10 publications

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“…The optical absorption in a-Si thin film can be achieved by wavelengths <1100 nm means that irradiation at both wavelengths of 1064 nm and 532 nm has the potential for LC process. Therefore, an SHG line is designed in order to construct an optical system which allows users to choose the wavelength by using a flip mirror [4,11,12]. A dielectric flip mirror for 1064 nm is used after the collimator to interchange the LC process irradiation wavelength.…”

Section: Harmonic Generationmentioning

confidence: 99%

“…In the literature, a variety of LC parameters for crystallization with different operation regimes (continuous wave (CW), pulsed etc.) and wavelengths are reported [4][5][6][7][8][9][10][11][12][13]. Ytterbium doped nanosecond pulsed fibre laser operating at 1064 nm was used for crystallization of hydrogenated amorphous silicon (a-Si:H) thin film on glass [4].…”

Section: Introductionmentioning

confidence: 99%

“…LPC was achieved with crystalline domains in size of centimetres by using CW laser [4,6]. Another two studies reported utilization of a 532 nm laser in LC for producing a pc-Si thin-film solar cell [11,12]. In another study, a-Si films deposited by plasma-enhanced chemical vapour deposition were crystallized by a pulsed multi-line Nd-YAG laser with central wavelengths of 1064 and 532 nm [8].…”

Section: Introductionmentioning

confidence: 99%

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A Dual-Wavelength Pulsed Laser Processing Platform for a-Si Thin Film Crystallization

et al. 2019

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Interest in laser crystallization (LC) of silicon (Si) thin films has been on the rise in fabrication of polycrystalline silicon (pc-Si) based thin/ultrathin photovoltaic solar cells and Si based thin film transistors (TFT). Laser based fabrication of device quality pc-Si thin films at room temperature is expected to be a key enabling technology because of its low energy, material and process time budget. Fabrication of high-quality pc-Si thin films without pre-/post-treatment at large is a disruptive technology which has the potential to revolutionize the Si thin film industry. We hereby describe in detail a multi-wavelength laser processing platform specially developed for crystallization of amorphous silicon (a-Si) thin films into pc-Si thin films. The platform has three main stages. The first stage consists of a nanosecond pulsed ytterbium (Yt 3+ ) doped fibre-laser with a master oscillator power amplifier architecture, operating at a wavelength of 1064 nm with an adjustable repetition rate between 80 kHz-300 kHz. The output beam has a maximum power of 18 W with a pulse energy of 90 µJ. The pulse durations can be set to values between 15 ns-40 ns. The second stage has free-space optical elements for second harmonic generation (SHG) which produces an emission at a wavelength of 532 nm. Conversion efficiency of the SHG is 25% with an output pulse energy of 20 µJ. The platform provides two wavelengths at either 1064 nm or 532 nm in crystallization of a-Si films for different crystallization regimes. The last stage of the platform has a sample processing assembly with a line-focus, which has an x-y motorized stage on a vibration isolated table. Speed of the motorized stage can be set between 1 mm/s-100 mm/s. Stage speed and repetition rate adjustments help to adjust overlap of successive pulses between 97.22-99.99%. Our platform has variety of tune parameters that make it a uniquely flexible system for delicate Si thin film crystallization. A large selection of operational parameter combinations, the wavelength selection and simultaneous x-y scanning capability allow users to crystallize Si films on various substrates optimally. The operation wavelength choice can be done by considering optical absorption and thickness of a-Si films on different types of substrates. Hence, delivering precise amount of absorbed energy in the line-focus irradiation is useful in increasing the average size of crystalline domains; moreover, nucleation of crystallites can be initiated either from the top or bottom interface of the film. Continuous and simultaneous motion of the stage in two dimensions allows to process arbitrary continuous pc-Si geometries in a-Si film. In summary, our multi-wavelength laser processing platform offers all-in-one LC utility for intricate LC-Si processing.

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Section: Harmonic Generationmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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A Dual-Wavelength Pulsed Laser Processing Platform for a-Si Thin Film Crystallization

et al. 2019

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“…Polycrystalline silicon thin film solar cells on glass are a very promising candidate to compete with the market leading silicon wafer solar cells. For this purpose, a common approach of fabricating high quality absorber material is the laser crystallization of silicon deposited on glass substrates by a liquid phase crystallization process (LPC) : a continuous wave (cw) laser beam is scanned across the sample and heats up the silicon layer of some micrometer thickness to its melting temperature. If the cooling rate is slow enough during the subsequent solidification very large grains with sizes of several hundred micrometers, millimeters, and even centimeters could be achieved .…”

Section: Introductionmentioning

confidence: 99%

Applicability of an economic diode laser emitting at 980 nm for preparation of polycrystalline silicon thin film solar cells on glass

Plentz

Schmidt

Gawlik

et al. 2017

Physica Status Solidi (a)

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Recently, polycrystalline silicon thin film solar cells on glass are fabricated by a laser induced liquid phase crystallization (LPC) process. This study compares a new economic diode laser, emitting a line focus at 980 nm, with the 808 nm laser normally used concerning its absorption during LPC. We measured the optical constants of amorphous silicon by spectral ellipsometry and UV/VIS spectroscopy. Together with the literature data for crystalline and liquid silicon combined with numerical temperature simulations, we calculated the absorption during LPC and the overall power needed for successful crystallization. Solar cells prepared with both laser types show comparable crystallographic and optoelectronic characteristics. Concerning the economic advantages, the use of such a 980 nm diode laser system would be the choice for the potential industrial production.Polycrystalline silicon thin film solar cells on glass are fabricated by laser-induced liquid phase crystallization. A new economic diode laser emitting a line focus at 980 nm is compared to the 808 nm laser normally used. Solar cells show comparable crystallographic and optoelectronic characteristics.

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“…For crystalline silicon thin film (CSiTF) solar cells on the foreign substrates, a recrystallization process plays an important role in enlarging the size of the silicon grains in order to reduce the density of the electrically active defects and increase the cell efficiencies, and hence the electron-beam recrystallization [1,2], zone melting recrystallization (ZMR) [3,4] and laser recrystallization [5][6][7][8][9] are widely developed [10][11][12][13]. Foreign substrate materials, such as ceramics [14][15][16] and graphite [17], are generally used for CSiTF cell fabrication with the high temperature approach.…”

mentioning

confidence: 99%

Recrystallized thin-film silicon solar cell on graphite substrate with laser single side contact and hydrogen passivation

Wittmann

Kunz

et al. 2015

EPJ Photovolt.

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Laser single side contact formation (LSSC) and the hydrogen passivation process are studied and developed for crystalline silicon thin film (CSiTF) solar cells on graphite substrates. The results demonstrate that these two methods can improve cell performance by increasing the open circuit voltage and fill factor. In comparison with our previous work, we have achieved an increase of 3.4% absolute cell efficiency for a 40 μm thick 4 cm 2 aperture area silicon thin film solar cell on graphite substrate. Current density-voltage (J-V ) measurement, quantum efficiency (QE) and light beam induced current (LBiC) are used as characterization methods.

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Efficiency and stability enhancement of laser-crystallized polycrystalline silicon thin-film solar cells by laser firing of the absorber contacts

Cited by 24 publications

References 10 publications

A Dual-Wavelength Pulsed Laser Processing Platform for a-Si Thin Film Crystallization

A Dual-Wavelength Pulsed Laser Processing Platform for a-Si Thin Film Crystallization

Applicability of an economic diode laser emitting at 980 nm for preparation of polycrystalline silicon thin film solar cells on glass

Recrystallized thin-film silicon solar cell on graphite substrate with laser single side contact and hydrogen passivation

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