Efficacy of Spatial and Temporal RHBD Techniques at Advanced Bulk FinFET Technology Nodes

Xiong, Y.; Pieper, Nicholas J.; Narasimham, B.; Ball, D. R.; Bhuva, B. L.

doi:10.1109/tns.2023.3246067

Cited by 3 publications

(3 citation statements)

References 30 publications

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“…We show the sensitivity and specificity as functions of the number of errors (i.e., the HD between the queries and the datawords) for predefined tolerance level k (set by adjusting V eval and V ref ). The highest number of errors (7) in this example is tolerated when V ref =0.8V and V eval =0.6V, marked by a star in Fig. 5(a).…”

Section: B Methodology and Measurement Resultsmentioning

confidence: 83%

“…Voltage scaling increases the error susceptibility of memories [7]. OCCAM retains error tolerance capabilities under voltage scaling, as demonstrated by the shmoo plot in Fig.…”

Section: B Methodology and Measurement Resultsmentioning

confidence: 89%

“…The ability to tolerate multiple-node and multiple-cell upsets is especially critical in deep submicron technologies (such as 7 nm and 5 nm) and under aggressive voltage scaling [7]. Hence, a CAM design that tolerates multiple bit errors per row and at the same time allows voltage scaling for low-power operation is highly advantageous.…”

Section: Introductionmentioning

confidence: 99%

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OCCAM: An Error Oblivious CAM

Harary,

Snapir,

Reshef

et al. 2024

IEEE Solid-State Circuits Lett.

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Content Addressable Memories (CAM) are widely used in many applications in general purpose computer microarchitecture, networking and domain-specific hardware accelerators. In addition to storing and reading data, CAMs enable simultaneous compare of query datawords with the entire memory content. Similar to SRAM and DRAM, CAMs are prone to errors and faults. While error correcting codes (ECC) are widely used in DRAM and SRAM, they are not directly applicable in CAM: if a dataword that is supposed to match a query altered due to an error, it will falsely mismatch even if it is ECCencoded. We propose OCCAM, an error oblivious CAM, which combines ECC and approximate search (matching) to allow tolerating a large and dynamically configurable number of errors. We manufactured the OCCAM silicon prototype using 65 nm commercial process and verified its error tolerance capabilities through silicon measurements. OCCAM tolerates 11% error rate (7 bit errors in each 64-bit memory row) with 100% sensitivity and specificity.

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Section: B Methodology and Measurement Resultsmentioning

confidence: 83%

“…Voltage scaling increases the error susceptibility of memories [7]. OCCAM retains error tolerance capabilities under voltage scaling, as demonstrated by the shmoo plot in Fig.…”

Section: B Methodology and Measurement Resultsmentioning

confidence: 89%