Effectual Interface and Defect Engineering for Auger Recombination Suppression in Bright InP/ZnSeS/ZnS Quantum Dots

Lee, Yujin; Jo, Dae-Yeon; Kim, Taehee; Jo, Jaemin; Park, Jumi; Yang, Heesun; Kim, Dongho

doi:10.1021/acsami.1c20088

Cited by 33 publications

(42 citation statements)

References 36 publications

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“…138 Another study found that this strain was associated with higher sulfur compositions, with lower sulfur composition gradients experiencing reduced strain, better suppressed Auger recombination, and decreased spectral diffusion. 139 Recent improvements in controlling the Zn chemistry of ZnSe/ZnS shellings, such as concomitant HF etching, increased shelling temperatures, and entropic ligand mixtures, have produced InP/ZnSe/ZnS QDs with near unity PLQYs and ensemble PL line widths as narrow as 35 nm 14,60,85,138 (Figure 7). In 2019, Won et al used HF etching concomitant with the initial ZnSe shell growth to remove oxides from the InP QD surface that impede initial shell deposition.…”

Section: Fluorescent Propertiesmentioning

confidence: 99%

“…This alloying can smooth the lattice change from ZnSe to ZnS to reduce lattice strain, but when compared directly, alloyed samples exhibit lower PLQYs than discrete ZnSe/ZnS shelled QDs. ,,, In 2019, Lee et al found that alloyed ZnSeS shells experienced more lattice strain than discrete ZnSe/ZnS shells, causing broader ensemble and single particle PL line widths . Another study found that this strain was associated with higher sulfur compositions, with lower sulfur composition gradients experiencing reduced strain, better suppressed Auger recombination, and decreased spectral diffusion …”

Section: Fluorescent Propertiesmentioning

confidence: 99%

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Synthesis, Surface Chemistry, and Fluorescent Properties of InP Quantum Dots

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Rosenthal

2023

Chem. Mater.

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InP quantum dots (QDs) have great potential as emitters for solid-state lighting, lasing, and bioimaging without the inherent toxicity concern of Cd and Pb-based emitters. Indium phosphide's small bandgap and high covalency make it uniquely capable of color-pure fluorescence that can be tuned throughout the visible and lower IR spectrum. Until recently, InP-based QDs consistently underperformed when compared with CdSe-based counterparts. Recent efforts to understand indium phosphide's nonclassical growth mechanisms, control the nanocrystal shape, control in situ formation of surface oxides, and grow thick, uniform shells have produced InP-based QDs comparable to their CdSe competitors with >95% quantum yields (QYs) in red, green, and blue emission wavelengths. This review covers the most common synthetic techniques, the most recent theories on InP formation mechanisms, the current understanding of InP surface chemistries, and the breadth of fluorescent properties of InP-based QDs.

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Section: Fluorescent Propertiesmentioning

confidence: 99%

Section: Fluorescent Propertiesmentioning

confidence: 99%

Synthesis, Surface Chemistry, and Fluorescent Properties of InP Quantum Dots

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Rosenthal

2023

Chem. Mater.

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“…Both oxidation defects and component doping could generate a large number of surface traps at the InP/ZnS interface, as these will cause energy losses, such as Förster resonance energy transfer (FRET) and Auger recombination (AR) [ 6 , 71 ]. To suppress the non-radiative progress, double-shell QDs were fabricated [ 72 ]. The conventional shell materials used in InP QDs are GaP, ZnS, ZnSe, and ZnSeS [ 6 , 73 , 74 , 75 , 76 ], as shown in Figure 5 .…”

Section: Influence Of Core/shell Structure On Performance Of Inp Qledsmentioning

confidence: 99%

Advances and Challenges in Heavy-Metal-Free InP Quantum Dot Light-Emitting Diodes

et al. 2022

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Light-emitting diodes based on colloidal quantum dots (QLEDs) show a good prospect in commercial application due to their narrow spectral linewidths, wide color range, excellent luminance efficiency, and long operating lifetime. However, the toxicity of heavy-metal elements, such as Cd-based QLEDs or Pb-based perovskite QLEDs, with excellent performance, will inevitably pose a serious threat to people’s health and the environment. Among heavy-metal-free materials, InP quantum dots (QDs) have been paid special attention, because of their wide emission, which can, in principle, be tuned throughout the whole visible and near-infrared range by changing their size, and InP QDs are generally regarded as one of the most promising materials for heavy-metal-free QLEDs for the next generation displays and solid-state lighting. In this review, the great progress of QLEDs, based on the fundamental structure and photophysical properties of InP QDs, is illustrated systematically. In addition, the remarkable achievements of QLEDs, based on their modification of materials, such as ligands exchange of InP QDs, and the optimization of the charge transport layer, are summarized. Finally, an outlook is shown about the challenge faced by QLED, as well as possible pathway to enhancing the device performance. This review provides an overview of the recent developments of InP QLED applications and outlines the challenges for achieving the high-performance devices.

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“…Reproduced with permission. [ 148 ] Copyright 2021, American Chemical Society. g) Schematic representation of InP/ZnSeS/ZnS QDs with discrete and gradient shells and the negative trion in gradient shell.…”

Section: Blue‐emitting Inp‐based Qledsmentioning

confidence: 99%

Advances, Challenges, and Perspectives for Heavy‐Metal‐Free Blue‐Emitting Indium Phosphide Quantum Dot Light‐Emitting Diodes

Cui

Yang

Qin

et al. 2022

Advanced Optical Materials

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on display. As a significant media for showing various information, it is expected that the next-generation display is able to provide excellent vision experience, and be light and even energy-efficient. Over the past few decades, quantum dot light-emitting diodes (QLEDs) have attracted much attention owing to their promising application in next-generation display. [1][2][3][4][5] In comparison with commercialized organic LEDs (OLEDs), the emitting layer of QLEDs, inorganic colloidal quantum dots (QDs) have advantages of tunable emission, narrow line width, high quantum yield (QY), and inorganic nature, which offer QLEDs wide color gamut, high color purity and luminance, solution-processability, and potentially high stability. [6] Nowadays, cadmium-based (Cd-based) QDs and their corresponding QLEDs have obtained much progress through many studies from materials to devices. The external quantum efficiencies (EQEs) of red, green, and blue emissive QLEDs have been improved to 30.9%, [7] 28.7%, [8] and 21.9%, [8] respectively. Moreover, they show high luminance, long lifetime, and high color purity. The excellent performance makes them potential alternatives to OLEDs in display. However, as a heavy metal element, Cd presents severe toxicity and environmental issues,dot light-emitting diodes (QLEDs), regarded as promising candidates in the next-generation display, have attracted much attention recently. In spite of the outstanding performance of cadmium-based (Cd-based) QLEDs, the toxicity of Cd hinders their wide application. Indium phosphide quantum dots (InP QDs) with heavy-metal-free feature and competitive performance are considered to be able to replace Cd-based QDs as emitting layer in the QLEDs. Much progress is obtained in the red-emitting and green-emitting InP-based QLEDs. However, the blue-emitting ones are faced with great challenges and are demanded on full-color display urgently, which is limited by the inferior performance of blue-emitting InP QDs and lack of investigations about their QLED devices. In this review, the encountered challenges for high-quality blue-emitting InP QDs are presented. Common strategies for blue-emitting InP QDs, including size engineering, composition engineering, and surface engineering are presented and analyzed. The progress of blue-emitting InP-based QLEDs, which strongly relies on the advances of materials, is also summarized. Finally, some perspectives from device physics are provided and discussed to inspire more efficient strategies toward blueemitting InP-based QLEDs.

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Effectual Interface and Defect Engineering for Auger Recombination Suppression in Bright InP/ZnSeS/ZnS Quantum Dots

Cited by 33 publications

References 36 publications

Synthesis, Surface Chemistry, and Fluorescent Properties of InP Quantum Dots

Synthesis, Surface Chemistry, and Fluorescent Properties of InP Quantum Dots

Advances and Challenges in Heavy-Metal-Free InP Quantum Dot Light-Emitting Diodes

Advances, Challenges, and Perspectives for Heavy‐Metal‐Free Blue‐Emitting Indium Phosphide Quantum Dot Light‐Emitting Diodes

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