Effects on Silanol Condensation during Low Temperature Silicon Fusion Bonding

Eichler, Marko; Michel, Benedikt; Hennecke, Philipp; Klages, Claus‐Peter

doi:10.1149/1.3196757

Cited by 20 publications

(32 citation statements)

References 30 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…• C. 23 Similarly, in wet activated bonded Si-Si wafers, Tong et al found a significant increase in surface energy following annealing in air at 150…”

Section: Discussionmentioning

confidence: 95%

Electrical, Mechanical, and Hermetic Properties of Low-Temperature, Plasma Activated Direct Silicon Bonded Joints

Schjølberg-Henriksen

Malik

Gundersen

et al. 2015

ECS J. Solid State Sci. Technol.

View full text Add to dashboard Cite

The electrical, mechanical, and hermeticity properties of low-temperature, plasma activated direct silicon bonds were investigated. On individual dies with a bonding area ranging from 1-4 mm 2 , the bonded interface was found to have a capacitance ranging from 2.62 pF/mm 2 -2.89 pF/mm 2 at 1 kHz. Linear I-V curves showed ohmic behavior without hysteresis. A resistance around 2.2 and a current density of 1.1 × 10 4 A/m 2 was measured at DC. We speculate that the capacitive and resistive responses are related to traps that are formed during the plasma activation process. The applied bonding process resulted in hermetic sealing with 100% yield on 2 × 481 dies. The maximum leak rate of the seals was 2.4 × 10 −11 mbar·l·s −1 , but could be significantly lower. No gross leaks were observed following a steady-state life test, a thermal shock test, and a moisture resistance test applied on 100 dies.

show abstract

“…• C. 23 Similarly, in wet activated bonded Si-Si wafers, Tong et al found a significant increase in surface energy following annealing in air at 150…”

Section: Discussionmentioning

confidence: 95%

Electrical, Mechanical, and Hermetic Properties of Low-Temperature, Plasma Activated Direct Silicon Bonded Joints

Schjølberg-Henriksen

Malik

Gundersen

et al. 2015

ECS J. Solid State Sci. Technol.

View full text Add to dashboard Cite

show abstract

“…On the other hand, specimen A3 treated for 60 s had lower saturated void density at and above 600 • C. This is attributed to the higher removal of native oxides and higher oxide thickness due to the prolonged surface activation. 19,20 The characteristic behavior of the temperature-dependent void density can be used to explain the bonding strength as a function of temperature in the SPAB of Fig. 3.…”

Section: Quantitative Analysis Of Voids From Roommentioning

confidence: 99%

Comparative annealing effect on bonded wafers in air and ultrahigh vacuum for microelectromechanical systems/microfluidics packaging

Howlader

Suga

2010

J. Micro/Nanolith. MEMS MOEMS

View full text Add to dashboard Cite

The fundamentals of room temperature bonding methodssurface activated bonding (SAB) and sequentially plasma-activated bonding (SPAB)-are reviewed with applications for packaging of microelectromechanical systems (MEMS) and microfluidic devices. The room temperature bonding strength of the silicon/silicon interface in the SAB and SPAB is as high as that of the hydrophilic bonding method, which requires annealing as high as 1000 • C to achieve covalent bonding. After heating, voids are not observed and bonding strengths are not changed in the SAB. In the SPAB, interfacial voids are increased and decreased the bonding strength. Water rearrangement such as absorption and desorption across the bonded interface is found below 225 • C. While voids are not significant up to 400 • C, a considerable amount of thermal voids above 600 • C is found due to viscous flow of oxides. Before heating, interfacial amorphous layers are observed both in the SAB (8.3 nm) and SPAB (4.8 nm), but after heating these disappear and enlarge in the SAB and SPAB, respectively. This enlarged amorphous layer is SiO 2 , which is due to the oxidation of silicon/silicon interface after sequential heating. The bonding strength, sealing, and chemical performances of the interfaces meet the requirements for MEMS and microfluidics applications. C 2010 Society of Photo-Optical Instrumentation Engineers.

show abstract

“…On the other hand, the specimen A3 treated for 60 s had lower saturated void density at and above 600°C. This is attributed to the higher removal of native oxides and higher oxide thickness due to the prolonged surface activation [20,21].…”

Section: Quantitative Analysis Of Voids From Room-temperature To 900°cmentioning

confidence: 99%

MEMS/microfluidics packaging without heating

Howlader

2010

SPIE Proceedings

View full text Add to dashboard Cite

The sequentially plasma activated bonding (SPAB) of silicon/silicon interface has been characterized after annealing up to 900ºC for packaging of micro-electro mechanical systems (MEMS) and microfluidic devices at low temperature. The bonding strength of the interface in the SPAB was as high as that of the conventional hydrophilic bonding method, which requires annealing as high as 1000ºC to achieve covalent bonding. The interfacial voids evolution with annealing temperatures has been correlated with the bonding strength. Although the rearrangement of water such as absorption and desorption across the bonded interface was found below 225ºC, the voids were not significant up to 400ºC. Annealing above 600ºC resulted in a considerable amount of thermal voids due to viscous flow of oxides. The thermal voids were grown preferentially at the plasma induced defect sites. The contact angle and roughness of the sequentially plasma (reactive ion etching plasma followed by microwave radicals) treated surfaces have been observed to explain the void formation and reduction of the bonding strength of the interface. The plasma induced defect sites such as nanopores and craters have been indentified using an atomic force microscope. The electron energy loss spectroscopy showed oxygen deficiency in the nanometer thick interfacial amorphous silicon oxide.

show abstract

Effects on Silanol Condensation during Low Temperature Silicon Fusion Bonding

Cited by 20 publications

References 30 publications

Electrical, Mechanical, and Hermetic Properties of Low-Temperature, Plasma Activated Direct Silicon Bonded Joints

Electrical, Mechanical, and Hermetic Properties of Low-Temperature, Plasma Activated Direct Silicon Bonded Joints

Comparative annealing effect on bonded wafers in air and ultrahigh vacuum for microelectromechanical systems/microfluidics packaging

MEMS/microfluidics packaging without heating

Contact Info

Product

Resources

About