Effects of ZrO2 additions on the dielectric properties of CaCu3Ti4O12

Patterson, Eric A.; Kwon, Seunghwa; Huang, Chien-Chih; Cann, David P.

doi:10.1063/1.2126142

Cited by 141 publications

(75 citation statements)

References 13 publications

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“…It costs much reaction time to prepare single-phase CCTO powder by traditional solid-state method. The synthesis of ZrO 2 -doped CCTO powder, for example, needs a prolonged total reaction time of 24 h [12]. A much shorter calcination time of 2 h is enough to yield single-phase Zr-substituted CCTO powder in our Pechini method.…”

Section: Resultsmentioning

confidence: 99%

“…The dielectric properties of the composition 0.1-1.0 wt% ZrO 2 ? CaCu 3 Ti 4 O 12 have been investigated and both of the dielectric constant and loss can be reduced [12]. In the above research, the obtained ZrO 2 -doped ceramics are nonstoichiometric and the results may not reveal directly the effects of Zr substituting Ti on the dielectric properties.…”

Section: Introductionmentioning

confidence: 97%

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Influence of Zr doping on the dielectric properties of CaCu3Ti4O12 ceramics

Zhang

Guo

et al. 2011

J Mater Sci: Mater Electron

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Pure and Zr-substituted CaCu 3 (Ti 1-x Zr x ) 4 O 12 (x = 0, 0.01, 0.02, 0.03) ceramics were prepared by the Pechini method. X-ray powder diffraction analysis indicated the formation of single-phase compound, and all the diffraction peaks were completely indexed by the bodycentered cubic perovskite-related structure. The effects of Zr 4? ion substituting partially Ti 4? ion on the dielectric properties were investigated in frequency range between 100 Hz and 1 GHz. The low frequency (f B 10 5 Hz) dielectric constant decreases with Zr substitution and the high frequency (f C 10 7 Hz) dielectric constant is unchanged. Interestingly, a low-frequency relaxation was observed at room temperature through Zr substitution. The observed dielectric properties in Zr-substituted samples were discussed using the internal barrier layer capacitor model. A corresponding equivalent circuit was adopted to explain the dielectric dispersion. The characteristic frequency of low-frequency relaxation rises due to the decrease of the resistivity of grain boundary with Zr substitution, which is likely responsible for the large low-frequency response at room temperature.

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Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 97%

Influence of Zr doping on the dielectric properties of CaCu3Ti4O12 ceramics

Zhang

Guo

et al. 2011

J Mater Sci: Mater Electron

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“…[261][262][263] There is an exemplary illustration of the dielectric properties of Ca 0.25 Cu 0.75 TiO 3 with doped metallic iron (CCTO/Fe), zirconia (CCTO/Zr) and, for comparison, CCTO prepared by high-temperature treatment (CCTO/T) below. [263][264][265][266] The mechanism of the impact through applying mechanical activation is based on the understanding that the mechanical energy is almost entirely transformed into thermal energy, whereupon some physical and chemical processes are initiated. In this sense, the MCS of complex oxides can be regarded as a process of ''quasi-adiabatic'' accumulation and distribution of energy in a solid-state body as a consequence of the mechanical treatment, possessing sufficient intensity of the impulse impact in a small volume for a very short time interval.…”

Section: Other Oxidic Systemsmentioning

confidence: 99%

Hallmarks of mechanochemistry: from nanoparticles to technology

et al. 2013

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The aim of this review article on recent developments of mechanochemistry (nowadays established as a part of chemistry) is to provide a comprehensive overview of advances achieved in the field of atomistic processes, phase transformations, simple and multicomponent nanosystems and peculiarities of mechanochemical reactions. Industrial aspects with successful penetration into fields like materials engineering, heterogeneous catalysis and extractive metallurgy are also reviewed. The hallmarks of mechanochemistry include influencing reactivity of solids by the presence of solid-state defects, interphases and relaxation phenomena, enabling processes to take place under non-equilibrium conditions, creating a well-crystallized core of nanoparticles with disordered near-surface shell regions and performing simple dry time-convenient one-step syntheses. Underlying these hallmarks are technological consequences like preparing new nanomaterials with the desired properties or producing these materials in a reproducible way with high yield and under simple and easy operating conditions. The last but not least hallmark is enabling work under environmentally friendly and essentially waste-free conditions (822 references).

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“…In the literature, the decrease in dielectric loss is attained by addition of impurities. [13][14][15][16][17][18][19] Thus, herein it was aimed to show the possibility of improving the nonOhmic behavior by suppressing the dielectric properties with the addition of Sn into the CCTO material. Moreover, the effects of doping were discussed considering dielectric relaxation processes and the mechanisms involved in the NBLC model.…”

mentioning

confidence: 99%

The dielectric suppress and the control of semiconductor non-Ohmic feature of CaCu3Ti4O12 by means of tin doping

Ribeiro¹,

Araujo²,

Bueno³

2011

Applied Physics Letters

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In this work it was demonstrated that the addition of Sn on CaCu3Ti4O12 material improved non-Ohmic behavior by suppressing dielectric properties. It was noted that the improvement of the varistor characteristics, monitored by the increase in nonlinear coefficient, occurs with the disappearance of the grain dielectric relaxation process with concomitant decreasing of both dielectric constant and dielectric loss values. By forming a solid solution, Sn4+ was incorporated into CaCu3Ti4O12 matrix deforming the crystal lattice and restricting the formation of polaronic stacking faults. Thus, the dielectric relaxation due to polaronic defects is believed to be the origin of the huge dielectric properties disappearance. This framework is in agreement with the nanosized barrier layer capacitor model.

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Effects of ZrO2 additions on the dielectric properties of CaCu3Ti4O12

Abstract: Articles you may be interested inThe dielectric suppress and the control of semiconductor non-Ohmic feature of CaCu 3 Ti 4 O 12 by means of tin doping Appl. Phys. Lett. 98, 132906 (2011); 10.1063/1.3574016 Intrinsic and extrinsic relaxation of CaCu 3 Ti 4 O 12 ceramics: Effect of sintering

Cited by 141 publications

References 13 publications

Influence of Zr doping on the dielectric properties of CaCu3Ti4O12 ceramics

Influence of Zr doping on the dielectric properties of CaCu3Ti4O12 ceramics

Hallmarks of mechanochemistry: from nanoparticles to technology

The dielectric suppress and the control of semiconductor non-Ohmic feature of CaCu3Ti4O12 by means of tin doping

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