Effects of ZnO additive on crystalline phase and microwave dielectric properties of 0.90Al2O3–0.10TiO2 ceramics

Lu, Xiaochi; Huang, Baoyu; Chen, Tao; Fu, Zhenxiao; Wang, Zhefei; Wang, Lixi; Zhang, Qitu

doi:10.1007/s10854-015-4078-9

Cited by 5 publications

(1 citation statement)

References 21 publications

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“…Tan et al [27] studied the effect of ZnO addition on the densification of forsterite ceramic and concluded that ZnO improved the density and microstructure of forsterite without inducing any chemical changes. Nikzad et al [28] achieved a less porous structure and high Quxf of 141,000 GHz for ZnOadded MgTiO 3 at a relatively low-sintering temperature of 1050 • C. Research work by Lu et al [29] shows that an optimal concentration of ZnO in 0.90Al 2 O 3 -0.10TiO 2 can reduce the sintering temperature, lessen the number of pores and smoothen the grain size of that ceramics. Muccillo et al [30] obtained 94% of the theoretical density for yttrium-doped barium zirconate through ZnO addition.…”

Section: Introductionmentioning

confidence: 99%

Analysis on the influence of ZnO addition on microwave dielectric properties of $$\hbox {Li}_{{2}}\hbox {MgSiO}_{{4}}$$ ceramics

et al. 2019

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Dielectric ceramics have gained wide attention owing to their applicability in a broad range of domains including a microwave communication system. Silicates are considered as the prospective substrate materials for microwave circuits due to their properties complementing with the requisites of a microwave substrate. Lightweight lithium-based silicate ceramic namely lithium magnesium silicate (Li 2 MgSiO 4 , LMS) was prepared by a solid-state reaction method. Zinc oxide (ZnO) was used as an additive to LMS in different weight percentages (0.5, 1.0, 1.5 and 2.0) and LMS-ZnO ceramics were also prepared. The microwave dielectric properties of pure LMS and ZnO-added LMS were measured and the influence of ZnO on LMS was investigated. A dielectric resonance technique was utilized to study the dielectric properties of ceramic samples at 12 GHz. A comparatively higher quality factor of 24,000 GHz was attained by the LMS-ZnO (2 wt%) system with a relative density of 90.2% and <10 dielectric constant of 5.76 making it suitable for substrate applications.

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