2020
DOI: 10.1007/s11664-020-08515-x
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Effects of Y Doping on Dielectric and Varistor Properties of CaCu3Ti4O12 Thin Films

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Cited by 12 publications
(3 citation statements)
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“…According to our previous work, 38 we found that Cu sites in the CCTO structure are preferably substituted by Li ions. Additionally, earlier experimental investigations of the Y-doped CCTO 53,54 show a marginal drop in the lattice parameter of this structure because the dopant, namely, Y ions, occupies sites with a slightly larger ionic radius. The covalent radii of Y 3+ , Ca 2+ , and Cu 2+ with their six nearest neighbors are 1.04, 1.14, and 0.87 Å, respectively.…”
Section: ••mentioning
confidence: 82%
“…According to our previous work, 38 we found that Cu sites in the CCTO structure are preferably substituted by Li ions. Additionally, earlier experimental investigations of the Y-doped CCTO 53,54 show a marginal drop in the lattice parameter of this structure because the dopant, namely, Y ions, occupies sites with a slightly larger ionic radius. The covalent radii of Y 3+ , Ca 2+ , and Cu 2+ with their six nearest neighbors are 1.04, 1.14, and 0.87 Å, respectively.…”
Section: ••mentioning
confidence: 82%
“…From the experimental investigations of Shannon 36 and Tkach et al 37 , the covalent radii of Y 3+ with 9 coordination numbers, Ca 2+ with 12 coordination numbers and Cu 2+ with 6 nearest neighbors are 1.23 Å, 1.48 Å and 0.87 Å, respectively. In the case of Y-doped CCTO, earlier experimental investigations 38,39 revealed that the lattice constant of this structure is reduced. In other words, Y ions should occupy sites with larger covalent radii.…”
Section: Discussionmentioning
confidence: 94%
“…192 These characteristics make CCTO ceramics a promising material for downsizing, light-weight nature, and energy conservation in electronic devices. 193,194 The internal barrier layer capacitance theory, 195,196 rather than an intrinsic property related to the crystal structure, is responsible for the interesting dielectric performance of CCTO. These effects occur at the grain interfaces and grain boundaries formed during crystal growth.…”
Section: Capacitor-based Microelectronic Devicesmentioning
confidence: 99%