Effects of wet-cleans and surface treatments on the adhesion of a photoresist to HDP-oxide substrate

Fu, Shih-Chi; Chen, Jieh-Jang; Shiu, F. J.; Kuo, Ching-Sen; Shiau, Gwo-Yun; Tsia, Chia-Shiung; Wang, Chung

doi:10.1117/12.601435

Cited by 1 publication

(2 citation statements)

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“…Adhesion of PR on substrate is one of the key issues in photolithography as poor adhesion between PR and the substrate will cause patterns dislocated or peeled in the developing process. This becomes a more serious issue by using ArF PR than by KrF or I-line ones [3]. Hexame--thyldisilazane (HMDS) and vapor priming systems has long been used to promote the resist adhesion to the underlying substrates, such as polysilicon, metals and SiO 2 layers in lithographic process.…”

Section: B Effects Of Adhesion Treatmentmentioning

confidence: 99%

“…Accordingly, the lithography tool sets required could be from I-line (365 nm), KrF (248 nm) to even ArF (193 nm) in the case for below 20 nm technologies. Although better resolution and overlay performance can be achieved by ArF lithography, much more defects were also found in using ArF PR for implant layer [3]. Numerous studies were carried out to investigate the defects reduction on conventional implant  Manuscript received July 11, 2015; revised December 23, 2015.…”

Section: Introductionmentioning

confidence: 99%

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Defects Elimination for ArF Implant Lithography

Wang¹,

Seow²,

Chen³

et al. 2016

IJMERR

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The application of ArF photoresist for implant process poses big challenge for process qualification in terms of defects control. Resist cracks and post development resist residues are the two most evident defects. In this study, two ArF photoresists for implant process have been selected to investigate the defect elimination. Lower PEB (post exposure bake) temperatures could help to reduce the tensile stress accumulated in the resist thus lower the risk of resist cracks. To reduce resist residue defect, longer deionized (DI) water rinse should combine with special puddle steps to relieve the developer pH shock during developing process. For better understanding the relationship between crack defects and contact angle, one advanced adhesion promotion material was introduced and investigated. It was found the spin-coated adhesion promotion material can significantly enhance the adhesion between the resist film and the underlying substrate due to lower contact angle formed. The implementation of the advanced adhesion promotion material resolved the resist cracks issue successfully. Finally, defects free ArF implant process was achieved through process optimization in our study. 

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Section: B Effects Of Adhesion Treatmentmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%