Effects of W6+ Doping on Structure and Electrical Property of VO² (A) Thin Film

Abstract

Abstract. Thin films composed of high pure VO 2 (A) doped W 6+ ions were successfully prepared by an inorganic sol-gel method. The effects of W 6+ ions doping on the structure, surface morphology and electrical property the films were investigated. The results show that the solution of W 6+ ions distorted the lattice of VO 2 (A) film, and made the lattice parameter d increase. With W 6+ ions concentration increase, the grain size of the film increased, and the grain shape became rod or block from sphere. The film resistance decreases sharply, near one magnitude with the W 6+ doping concentration increase from 0 to 0.75 at%. And W 6+ doping made the film TCR close to zero from a negative value, the film change to metal from semiconductor.