Effects of W contents on the solid-state interfacial reactions of Sn/Co-W

Synthesis of 3C/2H/6H heterojunction SiC nanowires with high-performance supercapacitors by thermal evaporation

“…59 Moreover, due to the dense SFs, the SAED pattern exhibited clear streaks along the growth direction. 60 As shown in Fig. 5e, for sample SC-1350, the diameter of the SiC NWs was about 90 nm, and the SAED pattern in the inset shows streaked diffraction and overlapping spots, suggesting the existence of twin crystals in SiC NWs.…”

Reliable and flexible supercapacitors toward wide-temperature operation based on self-supporting SiC/CNT composite films

“…As the typical third-generation semiconductor, SiC nanowires possess outstanding physical/ chemical properties, including the low thermal expansion coefficient, high electron mobility, and excellent structural stability, endowing them with unique advantages for constructing the outstanding SC device that is suitable for widetemperature operation. 20,26 (iii) The inherent advantages of the employed ionic liquid electrolyte, such as low-volatility, high thermal stability, meet the strict requirements of widetemperature operation. [53][54][55] (iv) The porous network structure of the composite lm electrode guarantees efficient ion migration under a wide-temperature working environment.…”

“…23 One-dimensional (1D) SiC nanomaterials exhibit superior properties to their bulk counterparts, 24,25 placing them among the most promising semiconductor materials in many domains of prospective nanoscience and nanotechnology, especially the built-in nanodevices that operate in extreme conditions. 26 To date, many studies have explored the application of 1D SiC nanomaterials in the eld of electrochemical energy storage. For example, Chen et al 27 reported all-solid-state exible SCs based on SiC nanowires, and their scan rate (30 V s À1 ) can be two orders of magnitude higher than that of conventional SCs.…”

Ab initio study revealing remarkable oscillatory effects and negative differential resistance in the molecular device of silicon carbide chains

“…The reason for the choice of SiC and Au is as follows: (1) the SiC chains are regarded as one of the most promising candidates for building blocks of future electronics due to their good conductive capability and high stability for the electron transfer. 11,50,52,53 (2) The Au electrode is preferred in most single-molecule transport measurements 8,10,21,54,55 for its stability and repeatability. In the device, the system is divided into three parts: the left electrode, the right electrode, and the central scattering region.…”

“…[1][2][3][4][5][6] In terms of the device scale, the one-atom-thick chains reaching the ultimate size are one of the prominent candidates to achieve these targets due to their high electrical conductivity and great carrier concentration. [7][8][9] Another important advantage of monatomic chains is that they have diverse dimensionality-dependent quantum effects, [9][10][11][12] especially the conductance oscillation and the negative differential resistance (NDR). These two effects are critical factors to promote the device multifunction and performance.…”