Effects of visible light illumination during plasma enhanced chemical vapor deposition growth on the film properties of hydrogenated amorphous silicon

Sakata, Isao; Yamanaka, Mitsuyuki

doi:10.1063/1.1421242

Cited by 4 publications

(1 citation statement)

References 25 publications

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“…Hydrogenated amorphous silicon (a-Si(H)) films were deposited on crystalline (c-) Si reed-substrates by means of the plasma enhanced chemical vapor deposition (PECVD) method similar to that reported in [11]. The deposition conditions were as follows: The SiH 4 and H 2 flow rates were 20 cc/min and 40 cc/min, respectively, where the total pressure was 80 Pa and the RF power was, typically, 12W.…”

Section: Methodsmentioning

confidence: 99%

Light-induced anelastic change in a-Si(H)

Hinuma

Kasai

Tanimoto

et al. 2006

Materials Science and Engineering: A

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The thermal desorption spectra between 400 K and 1100 K and the internal friction spectra between 80 K and 423 K were studied for a-Si(H). The thermal desorption of hydrogen was observed around 650 K (TDH 650K ) and around 900 K (TDH 900K,L and TDH 900K,H ). Both TDH 900K,L and TDH 900K,H with the activation energy of 1.6 eV were attributed to the desorption of bonded hydrogen. TDH 650K was not a diffusion controlled process with the activation energy of 1.0 eV, where one part of TDH 650K was attributed to the desorption of isolated hydrogen molecules. The hydrogen-induced internal friction, H-Q -1 a-Si(H) , was observed between 80 K and 423 K. Hydrogen responsible for H-Q -1 a-Si(H)showed the thermal desorption around 650 K (TDH 650K ), indicating that isolated hydrogen molecules in the amorphous structure may be responsible for H-Q -1 a-Si(H) . Light soaking caused changes in H-Q -1 a-Si(H) in the temperature ranges between 80 K and 200 K and between 200 K and 300 K, indicating that light soaking modified the local amorphous structures responsible for these changes in Q -1 a-Si(H) .

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Section: Methodsmentioning

confidence: 99%

Light-induced anelastic change in a-Si(H)

Hinuma

Kasai

Tanimoto

et al. 2006

Materials Science and Engineering: A

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Photovoltaics literature survey (No. 14)

Keevers

2002

Progress in Photovoltaics

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Post-transit photocurrent spectroscopy studies on the gap state distribution in hydrogenated amorphous silicon: Trap occupation problems in leaky junctions and high-defect-density samples

Sakata

Yamanaka

2003

Journal of Applied Physics

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Post-transit photocurrent spectroscopy (PTPS) has been employed as an effective method to obtain the energy distribution of gap states in undoped hydrogenated amorphous silicon. In this article, we demonstrate that the simplifying assumptions in conventional PTPS related to the trap occupation are not always valid and special care should be taken when we extend PTPS to samples with larger leakage currents and/or high-defect densities. We show test diode structures and experimental conditions to exactly determine the energy distribution of both electron and hole trap states in these cases. The attempt-to-escape frequency, ν, both for electrons and holes has been evaluated from the temperature dependence of the characteristic points in PTPS signal. It has been found that the density of electron and hole trap states in the deeper energy range increases with long exposure to visible light while the density in the shallower energy range decreases, which suggests the occurrence of defect conversion.

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Effects of visible light illumination during plasma enhanced chemical vapor deposition growth on the film properties of hydrogenated amorphous silicon

Cited by 4 publications

References 25 publications

Light-induced anelastic change in a-Si(H)

Light-induced anelastic change in a-Si(H)

Photovoltaics literature survey (No. 14)

Post-transit photocurrent spectroscopy studies on the gap state distribution in hydrogenated amorphous silicon: Trap occupation problems in leaky junctions and high-defect-density samples

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