Abstract:Trapping of He by vacancies and drainage of He from substitutional implants (Ag and Kr in W) to nearby vacancies are investigated using static lattice calculations. The calculations indicate that drainage of He will occur to vacancies within a radius of 2.5 lattice units from the implant. Furthermore the trapping probability of substitutional and interstitial random walkers on a bee lattice by substitutional traps or vacancies is calculated. When implantation-produced vacancies are present in the vicinity of t… Show more
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