Effects of using InGaZnO without annealing as buffer layer on the performance of InGaZnO thin film transistors

Chang-hua, 苟昌华 Gou; Ming-zhu, 武明珠 Wu; Yong-lin, 郭永林 Guo; Yongqiang, 杨永强 Yang; Xiao-liang, 关晓亮 Guan; Duan, Yu; Hong-Bo, 王红波 Wang

doi:10.3788/yjyxs20153004.0602

液晶与显示

2015

DOI: 10.3788/yjyxs20153004.0602

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Effects of using InGaZnO without annealing as buffer layer on the performance of InGaZnO thin film transistors

苟昌华 Gou Chang-hua¹,

武明珠 Wu Ming-zhu²,

郭永林 Guo Yong-lin³

et al.

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Effects of using InGaZnO without annealing as buffer layer on the performance of InGaZnO thin film transistors

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