Effects of ultraviolet light on B-doped CdS thin films prepared by spray pyrolysis method using perfume atomizer

Novruzov, V. D.; Keskenler, Eyüp Fahri; Tomakin, Murat; Kahraman, S.; Görür, O.

doi:10.1016/j.apsusc.2013.04.155

Cited by 20 publications

(6 citation statements)

References 41 publications

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“…The PL spectra show two strong emission peaks at 464 and 500 nm along with broad emission peaks occurring between 525 and 575 nm. The emission peak about 500 nm is associated with the near band edge emission (NBE) resulting from the electronic transition from the conduction band to the valance band and the peak at 464 nm (blue emission) is attributed to the transitions of trapped electrons from donor levels to the valance band . The slight gradual blue shift in the NBE peak confirms the gradual increase in the optical band gap caused by the Mo doping which is agreed well with the E g values estimated from the optical transmittance spectra.…”

Section: Resultssupporting

confidence: 83%

Realizing near stoichiometric and highly transparent CdS:Mo thin films by a low‐cost improved SILAR technique

Ravichandran¹,

Banu²,

Baneto

et al. 2015

Physica Status Solidi (a)

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Undoped and molybdenum doped CdS thin films were deposited on glass substrates using Improved Successive Ionic Layer Adsorption and Reaction (ISILAR) technique. The Mo doping level was varied from 0 to 15 at.% in steps of 5 at.%. The XRD analysis shows that all the films are polycrystalline with cubic structure and grow preferentially along the (111) plane. The crystallite size increases gradually with the increase in Mo doping level up to 10 at.% and decreases with further doping. The morphological studies reveal that Mo doping significantly affects the grains size. Qualitative and quantitative compositional analysis show that near stoichiometric undoped and Mo doped CdS thin films can be achieved using this ISILAR technique. All the films exhibit high transparency in the visible region with an average transmittance in the range of 85–95%.

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Section: Resultssupporting

confidence: 83%

Realizing near stoichiometric and highly transparent CdS:Mo thin films by a low‐cost improved SILAR technique

Ravichandran¹,

Banu²,

Baneto

et al. 2015

Physica Status Solidi (a)

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“…4 In addition, due to external impacts such as environmental radiation, high frequency electromagnetic waves and UV rays from the sun, etc., the physical properties of the solar cell layers (electrodes, window and absorber layers) may change which reduces the efficiency of solar cells. 5 So, environmental stability plays an important role in improving the lifetime and commercial viability of the solar cells. In order to improve the performance of CdS-based solar cells, it is essential that its window layer is not affected significantly by the external impacts.…”

Section: Introductionmentioning

confidence: 99%

Bromine doping effect on some properties of CdS films

Narasimman¹,

Nagarethinam²,

Selvan³

et al. 2017

Surface Engineering

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The suitability of bromine as an anionic dopant influencing the properties of CdS thin films is discussed in this paper. The as-deposited films were characterised respectively by XRD, SEM, UV-vis-NIR spectrophotometer and two-point probe setup. All the films appear to be polycrystalline in nature exhibiting hexagonal crystal structure with a (002) preferential growth texture. The 2θ value of the (002) plane shifts towards lower Bragg angle with doping inferring an expansion in their lattice volumes. Increased transparency and blue shift in optical band gap value are observed for the doped films. Electrical resistivity decreased with increase in Brdoping concentration. Increased transparency, widened band gap and decreased electrical resistivity values achieved confirm that Br is a suitable anionic dopant that can strongly influence the physical properties of pure CdS towards future optoelectronic devices.

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“…Combined with the analysis on the electrical conductivity of CdS thin film [15], the R s should mainly come from the high resistance of as-deposited CdS film, which is difficult to be further lowered just by controlling preparation conditions in the CBD process. To solve the problem, a commonly used method is to introduce suitable exotic atoms, such as by doping CdS thin film with Al, Zn, In and B atoms [15][16][17][18][19]. For example, it has been shown that suitable B-doping could both effectively reduce the dark resistivity and increase the room-temperature photosensitivity of CdS thin films [18,20].…”

Section: Introductionmentioning

confidence: 99%

Effect of boron-doping on the luminescent and electrical properties of a CdS/Si heterostructure based on Si nanoporous pillar array

Yan

Wang

Cai

et al. 2015

Journal of Alloys and Compounds

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Effects of ultraviolet light on B-doped CdS thin films prepared by spray pyrolysis method using perfume atomizer

Cited by 20 publications

References 41 publications

Realizing near stoichiometric and highly transparent CdS:Mo thin films by a low‐cost improved SILAR technique

Realizing near stoichiometric and highly transparent CdS:Mo thin films by a low‐cost improved SILAR technique

Bromine doping effect on some properties of CdS films

Effect of boron-doping on the luminescent and electrical properties of a CdS/Si heterostructure based on Si nanoporous pillar array

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