Effects of ultra-thin aluminium interlayer on Schottky barrier parameters of NiGe/n-type Ge Schottky barrier diode

Abstract

In this paper, the modulation of NiGe/n-Ge Schottky barrier height by modulating Ni/n-Ge reaction with 1 nm Al as an intermediate layer is investigated. The series resistance, barrier height and ideal factor of Schottky diodes were extracted by forward I-V method, Cheung method and Norde method, respectively. Compared with Ni/n-Ge SBD, the introduction of 1 nm Al insertion layer between Ni and Ge substrates can effectively reduce the barrier height and maintain stability between 350℃ and 450℃.