2012
DOI: 10.1016/j.microrel.2012.04.002
|View full text |Cite
|
Sign up to set email alerts
|

Effects of TSVs (through-silicon vias) on thermal performances of 3D IC integration system-in-package (SiP)

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
2
1

Citation Types

0
25
0
1

Year Published

2015
2015
2023
2023

Publication Types

Select...
4
3

Relationship

0
7

Authors

Journals

citations
Cited by 89 publications
(26 citation statements)
references
References 22 publications
0
25
0
1
Order By: Relevance
“…Without compromising processing speed, the integration of multi-chips in one interposer on the package tends to generate higher heat density, which needs to be addressed in the 2.5D or 3D package design. [102][103][104][105][106][107][108][109][110][111][112][113][114][115] A schematic of the cooling concepts is illustrated in Figure 50.…”
Section: Thermal Considerations Of 25d Packagesmentioning
confidence: 99%
See 2 more Smart Citations
“…Without compromising processing speed, the integration of multi-chips in one interposer on the package tends to generate higher heat density, which needs to be addressed in the 2.5D or 3D package design. [102][103][104][105][106][107][108][109][110][111][112][113][114][115] A schematic of the cooling concepts is illustrated in Figure 50.…”
Section: Thermal Considerations Of 25d Packagesmentioning
confidence: 99%
“…Specifically, their resistances vary to different extents with respect to different stress components. When a p-MOSFET is oriented along the [110] direction and is placed in between TSVs which are formed along the h110i directions in a rectangular manner, it is found to be more susceptible to mobility change than an n-MOSFET no matter how the n-MOSFET is oriented. This scenario is demonstrated in Figure 84.…”
Section: Design For Reducing Mobility Change Of Mosfets Near Tsvsmentioning
confidence: 99%
See 1 more Smart Citation
“…The technology paradigm of the semiconductor industries has shifted to 3D integration in all devices, interconnects, vias may be more efficient for the cooling of hot-spots than for whole device cooling (Cho and Lee 2010;Lau and Yue 2012). For whole device cooling, liquid cooling methods are potentially the most effective type of method to remove heat; however, the liquid cooling methods for IC devices have extreme system complexity due to the necessity of a high pumping power of coolant through a microchannel (Lau and Yue 2012), fluidic interconnection, and the complete sealing of the coolant; there is also the problem of high fabrication cost.…”
Section: Introductionmentioning
confidence: 99%
“…For whole device cooling, liquid cooling methods are potentially the most effective type of method to remove heat; however, the liquid cooling methods for IC devices have extreme system complexity due to the necessity of a high pumping power of coolant through a microchannel (Lau and Yue 2012), fluidic interconnection, and the complete sealing of the coolant; there is also the problem of high fabrication cost. Even so, the demand for a direct liquid cooling method is increasing continuously as one of the key future thermal methods because of the high heat removal rate that is possible.…”
Section: Introductionmentioning
confidence: 99%