Effects of trivalent lanthanide (La and Nd) doped ceria abrasives on chemical mechanical polishing

Kim, Eungchul; Lee, Jaewon; Bae, Chulwoo; Seok, Hyunho; Kim, Hyeong‐U; Kim, Taesung

doi:10.1016/j.powtec.2021.11.069

Cited by 36 publications

(9 citation statements)

References 51 publications

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“…Also, the spacing of lattice fringes belonging to the (200) plane also has the same variation trend. The successful introduction of La 3+ promotes the formation of defects in CeO 2 particles, which will significantly improve their CMP performance …”

Section: Resultsmentioning

confidence: 99%

“…The successful introduction of La 3+ promotes the formation of defects in CeO 2 particles, which will significantly improve their CMP performance. 24 Raman spectra can obtain the information of the arrangement of M−O bonds and lattice defects, especially for the study of oxygen vacancies in cerium-containing solid solution. For the perfect CeO 2 crystal, the strong Raman vibration peak near 466 cm −1 is the F 2g vibration band, which is generally considered to be the vibration of the symmetric absorption mode of O 2− and surrounding cations representing the vibration of O 2− connected to Ce 4+ .…”

Section: Characterization and Analysis Ofmentioning

confidence: 99%

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Enhancing the Polishing Efficiency of CeO₂ Abrasives on the SiO₂ Substrates by Improving the Ce³⁺ Concentration on Their Surface

Luo

et al. 2022

ACS Appl. Electron. Mater.

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The polishing activity of CeO 2 abrasives is enhanced by improving the Ce 3+ concentration on their surface. In this study, a series of Ce 1−x La x O 2 abrasives with different La 3+ doping were prepared. The abrasives were characterized by X-ray diffraction, scanning electron microscopy, transmission electron microscopy, Raman spectroscopy, and X-ray photoelectron spectroscopy. The effects of La 3+ doping on the morphology, size, and Ce 3+ concentration of the abrasives were studied. The morphology of the particles changes from sphere to octahedron with the La 3+ doping. The lattice expansion of the CeO 2 crystal after La 3+ doping also significantly improves the Ce 3+ concentration on the abrasive surface. However, the Ce 3+ concentration on the surface gradually became saturated when the x was 0.2 or more. The polishing performance proved that the material removal rate (MRR) is closely related to the Ce 3+ concentration generated by La 3+ doping. The MRR of pure CeO 2 abrasives with a Ce 3+ concentration of 20.53% on a SiO 2 substrate is 59.31 nm/min, while the Ce 0.7 La 0.3 O 2 abrasives with the Ce 3+ concentration increased to 34.41% achieved 101.12 nm/min. The polished surface quality was characterized by atomic force microscopy, which shows improved roughness of all samples. Furthermore, the differences in the removal rate of Ce 3+ and Ce 4+ in CeO 2 -based abrasives on the SiO 2 substrate were also discussed.

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Section: Resultsmentioning

confidence: 99%

Section: Characterization and Analysis Ofmentioning

confidence: 99%

Enhancing the Polishing Efficiency of CeO₂ Abrasives on the SiO₂ Substrates by Improving the Ce³⁺ Concentration on Their Surface

Luo

et al. 2022

ACS Appl. Electron. Mater.

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“…One way to achieve higher oxide rates is to develop more chemically reactive colloidal ceria particles by controlling various synthesis parameters, doping with lanthanide ions, or coating particles with reactive layers (core/shell particles). 14,[28][29][30][31][32][33][34][35] These are some of the methods used to prepare Ce 3+ -rich CeO 2 particles mentioned above. There are several reports of using mixed abrasive particles such as colloidal ceria with different sized ceria, silica, and alumina as core particles.…”

Section: Current Status and Trendsmentioning

confidence: 99%

Perspective—Recent Advances and Thoughts on Ceria Particle Applications in Chemical Mechanical Planarization

Seo

Kim

Kang

et al. 2022

ECS J. Solid State Sci. Technol.

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Along with the remarkable growth in the complexity of semiconductor fabrication technology, chemical mechanical planarization (CMP) has evolved and become progressively more sophisticated over the years, enabling the implementation of novel integration schemes. This paper discusses current research and development trends in one specific aspect of the CMP technology, namely, ceria particle usage for advanced technology nodes and provides some perspectives on how to improve CMP performance metrics of the current ceria abrasives and ceria-based CMP slurries and move forward to the next phase.

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“…The hardness of diamond abrasives was significantly higher than that of Al 2 O 3 abrasives, but the MRR of diamond abrasive was obviously lower than that of Al 2 O 3 abrasives, meaning that the chemical reactions probably happened between the substrate surface and Al 2 O 3 abrasives during sapphire CMP. 14 In addition, rare earth oxide abrasive 15 with high chemical activity, such as CeO 2 , 16 has been applied in the ultra-precision polishing of semiconductor substrates. Hence, the mechanical and chemical actions of abrasives can be utilized during material removal on the substrate surface.…”

Section: Introductionmentioning

confidence: 99%

Tribochemical mechanisms of abrasives for SiC and sapphire substrates in nanoscale polishing

Luo,

Lu,

Jiang

et al. 2023

Nanoscale

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Effects of trivalent lanthanide (La and Nd) doped ceria abrasives on chemical mechanical polishing

Cited by 36 publications

References 51 publications

Enhancing the Polishing Efficiency of CeO₂ Abrasives on the SiO₂ Substrates by Improving the Ce³⁺ Concentration on Their Surface

Enhancing the Polishing Efficiency of CeO₂ Abrasives on the SiO₂ Substrates by Improving the Ce³⁺ Concentration on Their Surface

Perspective—Recent Advances and Thoughts on Ceria Particle Applications in Chemical Mechanical Planarization

Tribochemical mechanisms of abrasives for SiC and sapphire substrates in nanoscale polishing

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Effects of trivalent lanthanide (La and Nd) doped ceria abrasives on chemical mechanical polishing

Cited by 36 publications

References 51 publications

Enhancing the Polishing Efficiency of CeO2 Abrasives on the SiO2 Substrates by Improving the Ce3+ Concentration on Their Surface

Enhancing the Polishing Efficiency of CeO2 Abrasives on the SiO2 Substrates by Improving the Ce3+ Concentration on Their Surface

Perspective—Recent Advances and Thoughts on Ceria Particle Applications in Chemical Mechanical Planarization

Tribochemical mechanisms of abrasives for SiC and sapphire substrates in nanoscale polishing

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Product

Resources

About

Enhancing the Polishing Efficiency of CeO₂ Abrasives on the SiO₂ Substrates by Improving the Ce³⁺ Concentration on Their Surface

Enhancing the Polishing Efficiency of CeO₂ Abrasives on the SiO₂ Substrates by Improving the Ce³⁺ Concentration on Their Surface