Effects of Trap Levels on Reverse Recovery Surge of Silicon Power Diode

Abstract

The absolute frequency of the f-component for the UME laser was measured with the BIPM femtosecond laser comb to be (473 612 353 602.0 ± 1.1) kHz during 3 March to 8 March, 2003 and with the UME comb to be (473 612 353 600.6 ± 1.1) kHz from 20 June to 25 June, 2005. After appropriate correction for power and modulation shifts a subkilohertz agreement between the two measurements was found. Moreover, the relative frequency stability for different UME-BIPM laser pairs is investigated using standard heterodyne techniques and Allan variance statistics.

Suppression of Reverse Recovery Surge Voltage of Silicon Power Diode by Adjusting Trap Energy Levels through Local Lifetime Control

“…In addition, the reverse recovery characteristics also have an influence on trap energy levels. We verified that variations in recombination rate due to trap energy levels have an influence on the surge voltage [3]. Thus, through adjustment of trap energy levels, control of local lifetime may have a suppression effect on the surge voltage.…”

Suppression of reverse recovery surge voltage of silicon power diode by adjusting trap energy levels through local lifetime control

“…[22][23][24] We previously verified that variations in recombination rate due to the difference in trap energy level affect surge voltage. 25) However, in our previous study, we investigated only a flat trap density distribution and did not consider local lifetime control.…”