Effects of transient carrier transport in millimeter-wave GaAs diodes

Grondin, R.; East, J.R.

doi:10.1109/t-ed.1984.21469

Cited by 19 publications

(3 citation statements)

References 22 publications

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“…Such "carrier inertia" phenomena are bound to require study for all future THz devices (see for example (Kollberg et al, 1991)), while the theory for lower frequency devices has been able to ignore these effects. The equivalent circuit of the 2DEG device is predicted to contain an additional inductance in series with the resistance, as shown in Figure 15 (Grondin et al, 1984). In measurements with a microprobe, and utilizing one of the balun circuits described in the previous section, graduate student Wes Grammer was able to confirm the presence of this inductance in the equivalent circuit of the 2DEG device (Grammer, 1992).…”

Section: Equivalent Circuit Of the 2deg Devicementioning

confidence: 96%

Focal plane arrays for submillimeter waves using two‐dimensional electron gas elements

Yang

Lau

Yngvesson

1994

Remote Sensing Reviews

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This paper describes a research effort, supported by the NASA Innovative Research Program, aimed at developing new types of THz low noise receivers, based on bulk effect ("hot electron") nonlinearities in the Two-Dimensional Electron Gas (2DEG) Medium, and the inclusion of such receivers in focal plane arrays. The original motivation and objectives of the research are discussed at some length. The results obtained cover several different sub-areas, and are discussed briefly, with references to other more detailed publications. 2DEG mixers have been demonstrated at 35 and 94 GHz with three orders of magnitude wider bandwidth than previous hot electron mixers. These mixers employ a new mode of operation, which was invented during this program. Based on the results of this research, it is now possible to design a bulk effect mixer focal plane array for the THz range, which is anticipated to have a DSB receiver noise temperature of 500-1000 K.

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Section: Equivalent Circuit Of the 2deg Devicementioning

confidence: 96%

Focal plane arrays for submillimeter waves using two‐dimensional electron gas elements

Yang

Lau

Yngvesson

1994

Remote Sensing Reviews

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“…In the transition between the neutral (low-field region) and the depleted (high-field region) regions of the epilayer, the electrons move in the high-field region with a mobility higher than expected from the static velocity-field curves due to the delayed response of the electron velocity to the local electric field (energy and momentum relaxation effects 2 ) [24], [72], [73]. As a consequence, the DD model overestimates the series resistance of the diode, because it uses the mobility from the static velocity-field curves.…”

Section: Appendix Nonlocal Effects In the Transition Between The Undepleted Epilayer And The Space-charge Regionmentioning

confidence: 99%

An Assessment of Available Models for the Design of Schottky-Based Multipliers Up to THz Frequencies

Pardo

Grajal

Pérez-Moreno

et al. 2014

IEEE Trans. THz Sci. Technol.

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This paper evaluates the ranges of application and physical limitations of lumped equivalent circuits and drift-diffusion models for the design of THz circuits. The predictions of these models have been compared with a Monte Carlo model, which was considered as a reference, and with measurements from doublers and triplers designed and fabricated by the Jet Propulsion Laboratory. Additionally, the usefulness of Schottky diodes as frequency multipliers above 3 THz is analyzed with the Monte Carlo model.

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“…If we assume a saturated electron velocity of 3 x lo7 c d s [5], [9] and the tripler pump frequency of 268 GHz, then (1) yields a epitaxial layer thickness of 0.18 pm. Thus, the older 2T2 design clearly has more epitaxial material than can be depleted of electrons and refilled within a pump cycle.…”

Section: (4)mentioning

confidence: 99%