Effects of Total Dose Irradiation on the Gate-Voltage Dependence of the $\hbox{1}/f$ Noise of nMOS and pMOS Transistors

Francis, S.A.; Dasgupta, Aritra; Fleetwood, D.M.

doi:10.1109/ted.2009.2036297

Cited by 47 publications

(26 citation statements)

References 47 publications

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“…Over the last years, the model has been applied successfully to semiconductor devices as well. Although other interpretations have been offered (e.g., [38], [47], [60]), the evidence (including that reviewed here) is overwhelming that carrier number fluctuations associated with trapping at and emission from defects and/or impurities, and not mobility fluctuations, are by far the most important source of low-frequency noise in semiconductor devices [2], [4], [7], [10], [24], [27], [30], [61]- [65]. The Dutta-Horn model often provides significant insight into the defect-energy distribution for semiconductor devices.…”

Section: A Temperature and Voltage Dependencementioning

confidence: 74%

<formula formulatype="inline"><tex Notation="TeX">$1/f$</tex></formula> Noise and Defects in Microelectronic Materials and Devices

Fleetwood

2015

IEEE Trans. Nucl. Sci.

157

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This paper reviews and compares predictions of the Dutta-Horn model of low-frequency excess ( ) noise with experimental results for thin metal films, MOS transistors, and GaN/AlGaN high-electron mobility transistors (HEMTs). For metal films, mobility fluctuations associated with carrier-defect scattering lead to noise. In contrast, for most semiconductor devices, the noise usually results from fluctuations in the number of carriers due to charge exchange between the channel and defects, usually at or near a critical semiconductor/insulator interface. The Dutta-Horn model describes the noise with high precision in most cases. Insight into the physical mechanisms that lead to noise in microelectronic materials and devices has been obtained via total-ionizing-dose irradiation and/or thermal an- nealing, as illustrated with several examples. With the assistance of the Dutta-Horn model, measurements of the noise magnitude and temperature and/or voltage dependence of the noise enable estimates of the energy distributions of defects that lead to noise. The microstructure of several defects and/or impurities that cause noise in MOS devices (primarily O vacancies) and GaN/AlGaN HEMTs (e.g., hydrogenated impurity centers, N vacancies, and/or Fe centers) have been identified via experiments and density functional theory calculations.Index Terms-Border traps, gallium nitride, HEMTs, interface traps, low-frequency noise, MOS devices, noise, oxide traps, radiation response, silicon carbide. 0018-9499

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Section: A Temperature and Voltage Dependencementioning

confidence: 74%

<formula formulatype="inline"><tex Notation="TeX">$1/f$</tex></formula> Noise and Defects in Microelectronic Materials and Devices

Fleetwood

2015

IEEE Trans. Nucl. Sci.

157

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“…The spikes in the spectra are from 60-Hz pickup and harmonics, and are ignored in the data analysis. The exponent describing the frequency dependence of the noise remained between 1 and 1.1 for all devices during each measurement, indicating that the underlying distribution of effective trap activation energies accessed by this frequency range varies slowly with respect to , where is the Boltzmann constant, and is the temperature [14], [28]- [30].…”

Section: A Interface Trap and Border Trap Densitiesmentioning

confidence: 93%

“…To investigate the energy dependence of the traps contributing to the noise, was measured as a function of [14], [35] for the D05 devices of Fig. 6, before irradiation, after 1000 total dose irradiation, and after 12-hour annealing.…”

Section: B Energy Dependence Of Trap Densities 1) Noisementioning

confidence: 99%

“…For a trap density that is constant in energy, is proportional to , with the slope equal to 2 (2) [12], [14], [30], [33], [34]. For these parts, in the energy range investigated, the pre-irradiation slope is less than 2, indicating a trap distribution that is increasing toward the valence band edge, consistent with what is often observed for pMOS devices on Si as well [14], [33]. However, after irradiation and annealing, the data suggests a more uniform trap distribution.…”

Section: B Energy Dependence Of Trap Densities 1) Noisementioning

confidence: 99%

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Comparison of Charge Pumping and <formula formulatype="inline"> <tex Notation="TeX">$1/f$</tex> </formula> Noise in Irradiated Ge pMOSFETs

Francis

Zhang

et al. 2012

IEEE Trans. Nucl. Sci.

Self Cite

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Irradiated Ge pMOSFETs have been characterized via charge pumping and noise. The noise increases much more with irradiation than does for devices with eight Si monolayers at the interface, while devices with five Si monolayers and lower halo implantation dose exhibit comparable increases in noise and with irradiation. These results suggest that border traps in the affect the noise more than interface traps, and that devices with eight Si monolayers have a higher border-trap density than devices with five Si monolayers. Noise measurements as a function of gate voltage show that the border trap density increases significantly toward the Ge valence band edge, while three-level charge pumping reveals an interface trap density that increases slightly toward midgap.

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“…Since most of the research and studies are emphasizing on shielding and material study on the bipolar technology, we extended our studies to the damage extents of gamma radiation at different operating conditions and parameters. All the monitoring jobs are carried out in situ and this is different from some of the conventional measurement methods that the changes in output parameter of the DUTs are analyzed after irradiated by the source [10,11]. This conventional method provides less accuracy results because changes could only be monitored for not in-flux test.…”

Section: Introductionmentioning

confidence: 99%

Defect Generation in Bipolar Devices by Ionizing Radiation

Chee¹,

Amir²,

Salleh³

2014

IOSRJAP

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Effects of Total Dose Irradiation on the Gate-Voltage Dependence of the $\hbox{1}/f$ Noise of nMOS and pMOS Transistors

Cited by 47 publications

References 47 publications

<formula formulatype="inline"><tex Notation="TeX">$1/f$</tex></formula> Noise and Defects in Microelectronic Materials and Devices

<formula formulatype="inline"><tex Notation="TeX">$1/f$</tex></formula> Noise and Defects in Microelectronic Materials and Devices

Comparison of Charge Pumping and <formula formulatype="inline"> <tex Notation="TeX">$1/f$</tex> </formula> Noise in Irradiated Ge pMOSFETs

Defect Generation in Bipolar Devices by Ionizing Radiation

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