Effects of Ti–W codoping on the optical and electrical switching of vanadium dioxide thin films grown by a reactive pulsed laser deposition

Soltani, M.; Chaker, Mohamed; Haddad, E.; Kruzelecky, Roman V.; Margot, J.

doi:10.1063/1.1788883

Cited by 174 publications

(101 citation statements)

References 18 publications

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“…Moreover, the co-doped films had a smaller ∆T MI compared with the nondoped film. 16 are also plotted for comparison. It is well known that hole doping by lower-valence elements such as Cr 3+ or Al 3+ raises the T MI , whereas electron doping with higher-valence elements such as Nb 5+ or W 6+ lowers the T MI .…”

Section: Resultsmentioning

confidence: 99%

“…However, Soltani et al reported that co-doping of VO 2 with Ti and W suppresses thermal hysteresis more effectively than does doping with W alone. 16 In their study, they simultaneously achieved a practical absence of thermal hysteresis and a TCR of 5.12%/K at room temperature in V 0.866 W 0.014 Ti 0.12 O 2 films. This TCR is larger than that of conventional uncooled bolometer materials.…”

Section: Introductionmentioning

confidence: 99%

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Chromium–niobium co-doped vanadium dioxide films: Large temperature coefficient of resistance and practically no thermal hysteresis of the metal–insulator transition

et al. 2016

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We investigated the effects of chromium (Cr) and niobium (Nb) co-doping on the temperature coefficient of resistance (TCR) and the thermal hysteresis of the metal–insulator transition of vanadium dioxide (VO2) films. We determined the TCR and thermal-hysteresis-width diagram of the V1−x−yCrxNbyO2 films by electrical-transport measurements and we found that the doping conditions x ≳ y and x + y ≥ 0.1 are appropriate for simultaneously realizing a large TCR value and an absence of thermal hysteresis in the films. By using these findings, we developed a V0.90Cr0.06Nb0.04O2 film grown on a TiO2-buffered SiO2/Si substrate that showed practically no thermal hysteresis while retaining a large TCR of 11.9%/K. This study has potential applications in the development of VO2-based uncooled bolometers.

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Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Chromium–niobium co-doped vanadium dioxide films: Large temperature coefficient of resistance and practically no thermal hysteresis of the metal–insulator transition

et al. 2016

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“…In particular, the value of T t can be decreased to room temperature by judiciously controlling the W doping concentration. Furthermore, the optical and electrical hysteresis can be completely eliminated by co-doping VO 2 with W and Ti [2]. The SMT characteristics of VO 2 can thus be exploited in various technological applications including all-optical switches, electro-optical switches, uncooled IR microbolometers, smart windows, etc.…”

Section: Introductionmentioning

confidence: 99%

Electrically tunable sign of capacitance in planar W-doped vanadium dioxide micro-switches

Soltani

Chaker

Margot

2011

Science and Technology of Advanced Materials

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Negative capacitance (NC) in a planar W-doped VO 2 micro-switch was observed at room temperature in the low-frequency range 1 kHz-10 MHz. The capacitance changed from positive to negative values as the W-doped VO 2 active layer switched from semiconducting to metallic state under applied voltage. In addition, a capacitance-voltage hysteresis was observed as the applied voltage was cycled from −35 to 35 V. These observations suggest that NC results from the increase of the electrically induced conductivity in the active layer. This NC phenomenon could be exploited in advanced multifunctional devices including ultrafast switches, field-effect transistors and memcapacitive systems.

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“…M. Soltani et al reported the optical and electrical properties of Ti-W co-doped VO 2 thin films by the PLD method. 21 However, PLD method is improper for growing large-size samples. Meanwhile, the deposition temperature is commonly very high at ~520 o C, which is not compatible to semiconductor techniques.…”

Section: Introductionmentioning

confidence: 99%

Simple and Low-temperature Growth of High Thermal Performance W-Ti Co-Doped VO2 Films on a Scale Wafer

Cao¹,

Sun²,

Chang³

et al. 2017

Nano Adv

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There has been a long-standing challenge in promoting the fundamental research frontier in oxide electronics to commercial devices applications. Wafer-scale growth of high-performance oxide thin films is demanded urgently. In this paper, we successfully fabricated W-Ti co-doped VO 2 films with a pretty high coefficient of resistance (TCR: 7.09%/°C) and without hysteresis during heating and cooling processing. A scalable growth on 4 inch SiN x /Si wafer was obtained with excellent resistance uniformity (1σ = 2.14%), which has great potential in practical applications. The W-Ti co-doped effects exhibit the depression on the VO 2 phase change properties, which could be ascribed to the variation of the electronic phase in correlated VO 2 films. In addition, we employed V 2 O 3 films as a buffer layer to make all the films growth done at 275 °C , which is comfortable for low-cost industrial applications and semiconductor processing compatibility.

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Effects of Ti–W codoping on the optical and electrical switching of vanadium dioxide thin films grown by a reactive pulsed laser deposition

Cited by 174 publications

References 18 publications

Chromium–niobium co-doped vanadium dioxide films: Large temperature coefficient of resistance and practically no thermal hysteresis of the metal–insulator transition

Chromium–niobium co-doped vanadium dioxide films: Large temperature coefficient of resistance and practically no thermal hysteresis of the metal–insulator transition

Electrically tunable sign of capacitance in planar W-doped vanadium dioxide micro-switches

Simple and Low-temperature Growth of High Thermal Performance W-Ti Co-Doped VO2 Films on a Scale Wafer

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