Effects of threading dislocations on drain current dispersion and slow transients in unpassivated AlGaN/GaN/Si heterostructure field-effect transistors

Ghosh, Saptarsi; Dinara, Syed Mukulika; Mukhopadhyay, Partha; Jana, Sanjay Kumar; Bag, Ankush; Chakraborty, Apurba; Chang, Edward Yi; Kabi, Sanjib; Biswas, Dhrubes

doi:10.1063/1.4893453

Cited by 12 publications

(10 citation statements)

References 25 publications

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“…With respect to SiC substrate, there are some challenges including the lattice mismatch between GaN and Si (%17%) [6], which results in higher density of dislocations in the GaN-substrate interface. These dislocations manifest themselves as electrons or holes traps [19][20][21][22]. These traps are responsible for the last mentioned IV kink and DC-RF dispersion.…”

Section: Thermal and Trapping Induced Kink Effectmentioning

confidence: 97%

Improved modeling of GaN HEMTs for predicting thermal and trapping-induced-kink effects

Jarndal

Ghannouchi

2016

Solid-State Electronics

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Section: Thermal and Trapping Induced Kink Effectmentioning

confidence: 97%

Improved modeling of GaN HEMTs for predicting thermal and trapping-induced-kink effects

Jarndal

Ghannouchi

2016

Solid-State Electronics

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“…Therefore, to investigate the trapping progression in the present study, gate‐drain synchronized pulsing from different bias specific quiescent points, was carried out on stressed HEMTs. Notably, 1% duty cycle drives with ms periods were implemented to particularly characterize deep‐traps with large

τ_{em}

. The adapted quiescent biases, Q DC ( V GSQ / V DSQ = 0 V), Q G ( V GSQ = −6 V, V DSQ = 0 V), and Q DG ( V GSQ = −6 V, V DSQ = 9 V) imposed the devices to equilibrium condition, trapping under the gate, and trapping under the gate as well as in gate‐drain access region, respectively.…”

Section: Electrical Structural Analysis and Discussionmentioning

confidence: 99%

On the different origins of electrical parameter degradation in reverse‐bias stressed AlGaN/GaN HEMTs

Ghosh

Dinara

Mahata

et al. 2016

Physica Status Solidi (a)

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Reverse bias stressing in AlGaN/GaN high electron mobility transistors (HEMTs) compelled severe degradation of drain current (I DS ) whereas gate current (I G ) remained largely unaffected. Besides, the response of access region conductivity to pulse drives was found to deteriorate gradually as a result of stress, and an interacting deep level in the form of kink effect was observed. Post degradation, SEM imaging evidenced the field-induced formation of protruding particles, immediately adjacent to the gate electrode. Auger spectroscopy and elemental mapping chemically identified these insulating particles as gallium oxide. Barrier/channel consumption in the form of electrochemical oxidation is thus held responsible for I DS degradation whereas I G degradation is entirely attributed on the presence of passivation layer. SEM micrographs of the (a) tested, and (b) untested finger of a À80 V bias stressed HEMT. (c) Auger spectra from an insulating particle, whereas (d) and (e) are oxygen and gallium elemental maps of the entire frame (c).

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“…Leakage currents have been successfully imaged along screw-type threading dislocations [21], and edge-type threading dislocations have been shown to be responsible for electron trapping and mobility degradation in GaN material system [22]. Therefore, the existence of threading dislocations impacts the leakage current adversely and introduces electron trapping centres [23].…”

Section: Role Of Threading Dislocations In Gan Hemtsmentioning

confidence: 99%

Low-Dispersion, High-Voltage, Low-Leakage GaN HEMTs on Native GaN Substrates

Alshahed

Heuken

Alomari

et al. 2018

IEEE Trans. Electron Devices

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Abstract-In this work the advantages of GaN HEMTs grown on native GaN substrates over GaN/Si or GaN/Sapphire substrates are investigated, and correlated with epitaxial quality. TEM plane view and cross section analysis of GaN/GaN revealed dislocation density lower than 1 × 10 6 cm −2 , which is at least 3 orders of magnitude lower than the case of GaN/Si or GaN/Sapphire. In the case of GaN/Si, the dislocations did not necessarily originate from the substrate/nucleation layer interface, but the strain relief and isolation buffer stacks were main contributors to the dislocation density. GaN/GaN HEMTs demonstrated superior electrical and thermal performance. GaN/GaN demonstrated 3 orders of magnitude lower off-state leakage, current collapse (Ron increase) after stress bias less than 15% compared to 50% in the case of GaN/Si, and 2% drop of the onstate current due to self-heating in DC operation as compared to 13% and 16% for GaN/Si and GaN/Sapphire respectively. The GaN/Si thermal performance approached GaN/GaN only by substrate removal. Therefore GaN/GaN can allow high on-state current, low off-state leakage current, minimal current collapse, and enhanced thermal dissipation capability at the same time, which can be directly correlated to the absence of high dislocation densities.

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Effects of threading dislocations on drain current dispersion and slow transients in unpassivated AlGaN/GaN/Si heterostructure field-effect transistors

Cited by 12 publications

References 25 publications

Improved modeling of GaN HEMTs for predicting thermal and trapping-induced-kink effects

Improved modeling of GaN HEMTs for predicting thermal and trapping-induced-kink effects

On the different origins of electrical parameter degradation in reverse‐bias stressed AlGaN/GaN HEMTs

Low-Dispersion, High-Voltage, Low-Leakage GaN HEMTs on Native GaN Substrates

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